HS1D

更新时间： 2024-02-05 18:54:35

品牌	Logo	应用领域
固锝 - GOOD-ARK		二极管光电二极管
页数	文件大小	规格书
2页	187K
描述
High Efficient Surface Mount Rectifiers Reverse Voltage 50 to 1000 Volts Forward Current 1.0 Ampere

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中文翻译

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技术参数
数据手册

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HS1D 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.54	二极管类型：	RECTIFIER DIODE
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	端子面层：	Matte Tin (Sn)
处于峰值回流温度下的最长时间：	30	Base Number Matches：	1

HS1D 数据手册

HS1A thru HS1M

High Efficient Surface Mount Rectifiers

Reverse Voltage 50 to 1000 Volts Forward Current 1.0 Ampere

Features

Glass passivated junction chip.

For surface mounted application

Low forward voltage drop

Low profile package

Built-in stain relief, ideal for automatic placement

Fast switching for high efficiency

High temperature soldering:

250^oC/10 seconds at terminals

Plastic material used carries Underwriters Laboratory

Classification 94V-O

Mechanical Data

Cases: Molded plastic

Terminals: Solder plated

Polarity: Indicated by cathode band

Weight: 0.002 ounce, 0.064 gram

Maximum Ratings and Electrical Characteristics

Ratings at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Parameter

Symbols

HS1A

HS1B

HS1D

HS1F

HS1G

HS1J

HS1K

HS1M

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

See Fig.2

1.0

Amp

(AV)

Peak forward surge current, 8.3ms single

half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

30.0

Amps

Volts

Maximum instantaneous forward voltage @ 1.0A

V_F

I_R

1.0

1.3

1.7

Maximum DC reverse current

at rated DC blocking voltage

@ T_A=25^oC

5.0

100

@ T_A=100^oC

^oC

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Operating junction temperature range

Storage temperature range

t_rr

C_J

T_J

-55 to +150

T_STG

Notes:

1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

161

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