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HS1-6664RH PDF预览

HS1-6664RH

更新时间: 2024-01-21 14:01:34
品牌 Logo 应用领域
英特矽尔 - INTERSIL 可编程只读存储器
页数 文件大小 规格书
3页 181K
描述
Radiation Hardened 8K x 8 CMOS PROM

HS1-6664RH 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:DIP
包装说明:DIP, DIP28,.6针数:28
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.2
最长访问时间:65 nsJESD-30 代码:R-CDIP-T28
JESD-609代码:e0内存密度:65536 bit
内存集成电路类型:OTP ROM内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装等效代码:DIP28,.6封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified筛选级别:MIL-PRF-38535 Class T
座面最大高度:5.92 mm最大待机电流:0.0005 A
子类别:OTP ROMs最大压摆率:0.015 mA
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED总剂量:100k Rad(Si) V
宽度:15.24 mmBase Number Matches:1

HS1-6664RH 数据手册

 浏览型号HS1-6664RH的Datasheet PDF文件第2页浏览型号HS1-6664RH的Datasheet PDF文件第3页 
HS-6664RH-T  
Data Sheet  
July 1999  
File Number 4609.1  
Radiation Hardened 8K x 8 CMOS PROM  
Features  
Intersil’s Satellite Applications FlowTM (SAF) devices are fully  
tested and guaranteed to 100kRAD total dose. These QML  
Class T devices are processed to a standard flow intended  
to meet the cost and shorter lead-time needs of large  
volume satellite manufacturers, while maintaining a high  
level of reliability.  
• QML Class T, Per MIL-PRF-38535  
• Radiation Performance  
5
- Gamma Dose (γ) 1 x 10 RAD(Si)  
2
- No Latch-Up, SEU LET >100MeV/mg/cm  
8
Transient Output Upset >5 x 10 RAD (Si)/s  
• Fast Access Time - 35ns (Typical)  
The Intersil HS-6664RH-T is a radiation hardened 64K  
CMOS PROM, organized in an 8K word by 8-bit format. The  
chip is manufactured using a radiation hardened CMOS  
process, and utilizes synchronous circuit design techniques  
to achieve high speed performance with very low power  
dissipation.  
• Single 5V Power Supply, Synchronous Operation  
• Single Pulse 10V Field Programmable NiCr Fuses  
• On-Chip Address Latches, Three-State Outputs  
• Low Standby Current <500µA (Pre-Rad)  
• Low Operating Current <15mA/MHz  
On-chip address latches are provided, allowing easy  
interfacing with microprocessors that use a multiplexed  
address/data bus structure. The output enable control (G)  
simplifies system interfacing by allowing output data bus  
control in addition to the chip enable control (E). All bits are  
manufactured storing a logical “0” and can be selectively  
programmed for a logical “1” at any bit location.  
Pinouts  
HS1-6664RH-T (SBDIP), CDIP2-T28  
TOP VIEW  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
NC  
A12  
A7  
V
DD  
P  
NC  
3
4
A8  
A6  
Specifications  
5
A5  
A9  
Specifications for Rad Hard QML devices are controlled by  
the Defense Supply Center in Columbus (DSCC). The SMD  
numbers listed below must be used when ordering.  
6
A4  
A11  
G
7
A3  
8
A2  
A10  
E
Detailed Electrical Specifications for the HS-666s4RH-T  
are contained in SMD 5962-95626. A “hot-link” is provided  
from our website for downloading.  
9
A1  
10  
11  
12  
13  
14  
A0  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
DQ0  
DQ1  
DQ2  
GND  
www.intersil.com/spacedefense/newsafclasst.asp  
Intersil’s Quality Management Plan (QM Plan), listing all  
Class T screening operations, is also available on our  
website.  
www.intersil.com/quality/manuals.asp  
HS9-6664RH-T (FLATPACK), CDFP3-F28  
TOP VIEW  
Ordering Information  
V
NC  
A12  
A7  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
DD  
P †  
NC  
2
TEMP.  
3
ORDERING  
INFORMATION  
PART  
NUMBER  
RANGE  
o
A8  
A6  
( C)  
4
A5  
A9  
5
5962R9562601TXC  
HS1-6664RH/Proto  
5962R9562601TYC  
HS9-6664RH/Proto  
HS1-6664RH-T  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
A4  
A11  
G
6
A3  
7
HS1-6664RH/Proto  
HS9-6664RH-T  
A2  
A10  
E
8
A1  
9
A0  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
10  
11  
12  
13  
14  
HS9-6664RH/Proto  
DQ0  
DQ1  
DQ2  
GND  
NOTE: Minimum order quantity for -T is 150 units through  
distribution, or 450 units direct.  
P must be hardwired at all times to V , except during programming.  
DD  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
1
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.  

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