Datasheet > HS0-302AEH-Q

HS0-302AEH-Q

更新时间： 2024-09-23 21:21:47

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
11页	564K
描述
DPST

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中文翻译

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技术参数
数据手册

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HS0-302AEH-Q 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.67	模拟集成电路 - 其他类型：	DPST
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

HS0-302AEH-Q 数据手册

DATASHEET

Radiation Hardened CMOS Dual DPST Analog Switch

HS-302AEH

Features

The HS-302AEH is a dual Double-Pole-Single Throw (DPST)

analog switch fabricated using Intersil’s dielectrically isolated

Radiation Hardened Silicon Gate (RSG) process technology to

insure latch-up free operation. It is pin compatible and

functionally equivalent to the HS-302RH.

• Electrically screened to DLA SMD# 5962-95812

• No latch-up, dielectrically isolated device islands

• Pin and functionally compatible with Intersil HS-302RH

series analog switches

• Analog signal range equal to the supply voltage range

This switch offers convenient switching controlled by 5V digital

inputs and low-resistance switching performance for analog

voltages up to the supply rails. ON-resistance is low and stays

reasonably constant over the full range of operating voltage

and current as well as over exposure to radiation.

• Low leakage . . . . . . . . . . . . . . . . 150nA (maximum, post-rad)

• Low r

ON . . . . . . . . . . . . . . . . . . . . . . . . . .60Ω

(maximum, post-rad)

• Low standby supply current . . ±150µA (maximum, post-rad)

• Radiation assurance

The HS-302AEH is available in a 14 Ld CDFP or die form and

operates across the extended temperature range of -55°C to

+125°C.

- High dose rate (50 to 300rad(Si)/s) . . . . . . . . 100krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*

• Single event effects

Applications

• Signal processing applications

• Power supply control

- For LET = 60MeV•mg/cm at 60° incident angle,

<150pC charge transferred to the output of an off switch

* Product capability established by initial characterization. The

EH version is acceptance tested on a wafer-by-wafer basis to

50krad(Si) at low dose rate.

= 10mA

= ±15V

+125°C

+25°C

-55°C

FIGURE 1. LOGIC CIRCUIT

TABLE 1. TRUTH TABLE

LOGIC

All SWITCHES

-15

-10

-5

VDx (V)

OFF

FIGURE 2. r vs SIGNAL LEVEL vs TEMPERATURE

July 15, 2016

FN8815.0

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

12 3 4 5 6 7...11

中文翻译

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与HS0-302AEH-Q相关器件

型号	品牌	获取价格	描述	数据表
HS0-302EH-Q	INTERSIL	获取价格	Radiation Hardened CMOS Dual DPST Analog Switch
HS0-302RH/SAMPLE	RENESAS	获取价格	DPST
HS0-302RH-Q	RENESAS	获取价格	DUAL 2-CHANNEL, DBL POLE SGL THROW SWITCH, UUC, DIE
HS0-303AEH-Q	INTERSIL	获取价格	Radiation Hardened CMOS Dual SPDT Analog Switch
HS0-303AEH-Q	RENESAS	获取价格	SGL POLE DOUBLE THROW SWITCH
HS0-303ARH	INTERSIL	获取价格	Radiation Hardened CMOS Dual SPDT Analog Switch
HS0-303ARH/SAMPLE	INTERSIL	获取价格	Radiation Hardened CMOS Dual SPDT Analog Switch
HS0-303ARH-Q	INTERSIL	获取价格	Radiation Hardened CMOS Dual SPDT Analog Switch
HS0-303BEH-Q	RENESAS	获取价格	SGL POLE DOUBLE THROW SWITCH
HS0-303BEH-Q	INTERSIL	获取价格	Radiation Hardened CMOS Dual SPDT Analog Switch

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