Datasheet > HS-4424BRH

HS-4424BRH

更新时间： 2024-10-03 11:16:23

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
16页	528K
描述
Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers

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HS-4424BRH 数据手册

DATASHEET

Dual, Noninverting Power MOSFET Radiation Hardened

Drivers

HS-4424DRH

Features

The radiation hardened HS-4424 family are noninverting, dual,

monolithic high-speed MOSFET drivers designed to convert low

voltage control input signals into higher voltage, high current

outputs. The HS-4424DRH is fully tested across the 8V to 18V

operating range.

• Electrically screened to DLA SMD# 5962-99560

• QML qualified per MIL-PRF-38535 requirements

• Latch-up immune

• Radiation environment

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)

The inputs of these devices can be directly driven by the

HS-1825ARH PWM device or by our ACS/ACTS and HCS/HCTS

type logic devices. The fast rise times and high current outputs

allow very quick control of high gate capacitance power

MOSFETs in high frequency applications.

• I_PEAK. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (min)

• Matched rise and fall times (C_L= 4300pF). . . . . . . 75ns (max)

• Low voltage lockout feature . . . . . . . . . . . . . . . . . . . . . . . . <8V

• Wide supply voltage range . . . . . . . . . . . . . . . . . . . . 8V to 18V

The high current outputs minimize power losses in MOSFETs by

rapidly charging and discharging the gate capacitance. The

output stage incorporates a low voltage lockout circuit that

puts the outputs into a three-state mode when the supply

voltage is below its Undervoltage Lockout (UVLO) threshold

voltage.

• Propagation delay . . . . . . . . . . . . . . . . . . . . . . . . .250ns (max)

• Consistent delay times with V_CCchanges

• Low power consumption

- 40mW with inputs high

- 20mW with inputs low

Constructed with Intersil’s dielectrically isolated Rad Hard

Silicon Gate (RSG) BiCMOS process, these devices are immune

to single event latch-up and have been specifically designed to

provide highly reliable performance in harsh radiation

environments.

• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)

• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >4kV

Applications

• Switching power supplies

• DC/DC converters

TABLE 1. HS4424 PRODUCT FAMILY SPECIFIC UVLO Vth

PART NUMBER

UVLO (V)

<10

HS-4424RH

HS-4424EH

• Motor controllers

HS4424BRH

HS4424BEH

<7.5

HS4424DRH

7.7

+8V TO +18V

VCC

UVLO_f

7.6

UVLO_r

7.5

OUT A

IN A

PWM

7.4

7.3

7.2

CONTROLLER

IN B

OUT B

HS-1825ARH

HS-4424DRH

GND

-55

125

TEMPERATURE (°C)

FIGURE 1. TYPICAL APPLICATION

FIGURE 2. UNDERVOLTAGE LOCKOUT vs TEMPERATURE

July 1, 2015

FN8747.1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

12 3 4 5 6 7...16

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与HS-4424BRH相关器件

型号	品牌	获取价格	描述	数据表
HS4424DEH	INTERSIL	获取价格	Dual, Noninverting Power MOSFET Radiation Hardened Drivers
HS-4424DEH	RENESAS	获取价格	Dual, Noninverting Power MOSFET Radiation Hardened Drivers
HS4424DRH	INTERSIL	获取价格	Dual, Noninverting Power MOSFET Radiation Hardened Drivers
HS-4424DRH	RENESAS	获取价格	Dual, Noninverting Power MOSFET Radiation Hardened Drivers
HS-4424EH	RENESAS	获取价格	HS-4424EH
HS-4424RH	INTERSIL	获取价格	Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
HS-4424RH	RENESAS	获取价格	Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
HS44300000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
HS44300100J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block
HS44302000J0G	AMPHENOL	获取价格	Barrier Strip Terminal Block

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