Datasheet
HS-302AEH
Radiation Hardened BiCMOS Dual DPST Analog Switch
The HS-302AEH is a dual Double-Pole, Single-Throw
Features
(DPST) analog switch fabricated using the Renesas
dielectrically isolated Radiation Hardened Silicon
Gate (RSG) process technology to ensure latch-up
free operation. The HS-302AEH is pin compatible and
functionally equivalent to the HS-302RH.
• Electrically screened to DLA SMD# 5962-95812
• No latch-up, dielectrically isolated device islands
• Pin and functionally compatible with Renesas
HS-302RH series analog switches
The HS-302AEH offers convenient switching
• Analog signal range equal to the supply voltage
range
controlled by 5V digital inputs and low-resistance
switching performance for analog voltages up to the
supply rails. ON-resistance is low and stays
• Low leakage: 150nA (maximum, post-rad)
• Low r : 60Ω (maximum, post-rad)
reasonably constant across the full range of operating
voltage and current and as over exposure to radiation.
ON
• Low standby supply current: ±150µA (maximum,
post-rad)
The HS-302AEH is available in a 14 Ld CDFP or die
form and operates across the extended temperature
range of -55°C to +125°C.
• Radiation assurance (Note 1)
○ High dose rate (50 to 300rad(Si)/s): 100krad(Si)
○ Low dose rate (0.01rad(Si)/s): 50krad(Si)
• Single event effects
Applications
• Signal processing applications
2
• Power supply control
○ SEE for LET = 60MeV·cm /mg at 60° incident
angle, <150pC charge transferred to the output of
an off switch (based on SOI design calculations)
Note:
1. Product capability established by initial characterization.
Acceptance tested on a wafer-by-wafer basis to 50krad(Si) at
low dose rate.
S
60
I
= 10mA
N
P
S
IN
V
= ±15V
S
50
40
30
20
10
0
D
+125°C
+25°C
Figure 1. Logic Circuit
-55°C
Table 1. Truth Table
Logic
All Switches
OFF
-15
-10
-5
0
5
10
15
VDx (V)
0
1
Figure 2. rON vs Signal Level vs Temperature
ON
FN8815 Rev.3.0
Jul 7, 2021
Page 1 of 15
© 2016 Renesas Electronics