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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| HR12508100J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| HR12509000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| HR12509100J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| HR1250C000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| HR1250C100J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| HR1251W | CSB-BATTERY |
获取价格 |
specially designed for high efficient discharge application |
|
| HR1251W_16 | CSB-BATTERY |
获取价格 |
Cells Per Unit 6 Voltage Per Unit 12 |
|
| HR1251W_17 | CSB-BATTERY |
获取价格 |
Valve Regulated Lead Acid Battery |
|
| HR1290W | CSB-BATTERY |
获取价格 |
specially designed for high efficient discharge application. |
|
| HR1290W_15 | CSB-BATTERY |
获取价格 |
Its characteristics are high energy density, small footprint and high discharge efficiency |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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