Datasheet > HPD650R650PC-G

HPD650R650PC-G

更新时间： 2024-04-09 18:59:30

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	463K
描述
TO-252

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HPD650R650PC-G 数据手册

HPD650R650PC-G

○

Source-Drain Diode Characteristics

Rating

Typ.

Parameter

Test Conditions

Symbol

Units

Min.

Max.

Continuous Source Current (Body Diode)

Maximum Pulsed Current (Body Diode)

Diode Forward Voltage

I_S

Tc=25℃

I_SM

V_SD

T_rr

Q_rr

I_rrm

1.2

I_S=4A,V_GS=0V

I_S=3A,T_j= 25°C

196

Reverse Recovery Time

1640

16.7

Reverse Recovery Charge

dI_F/dt=100A/us,

V_GS=0V

Reverse Recovery Current

Thermal Restistance

Parameter

Max.

Symbol

Units

Junction-to-Case

R_θ

1.32

100

℃/W

Junction-to-Ambient

R_θ

^a1：Limited by Tjmax Maximum duty cycle D=0.75

^a2：Repetitive rating; pulse width limited by maximum junction temperature

^a3：L=20.0mH, Rg=25 Ω，Vdd=50V, Start T_J=25℃

^a4：Identical low side and high side switch with identical Rg

^a5：Recommend soldering temperature defined by IPC/JEDEC J-STD 020

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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