Datasheet > HPD800R900PD-G

HPD800R900PD-G

更新时间： 2024-03-03 10:08:27

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	440K
描述
TO-252

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HPD800R900PD-G 数据手册

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Silicon N-Channel Power MOSFET

HPD800R900PD-G

General Description：

V_DSS(Tjmax)

I_D

850

HPD800R900PD-G, the silicon N-channel Enhanced

MOSFETs, is obtained by the super junction technology which

reduces the conduction loss, improve switching performance and

enhance the avalanche energy. The transistor can be used in

various power switching circuit for system miniaturization and

higher efficiency. The package type is TO-252, which accords

with the RoHS standard.

P_D(T_C=25℃)

R_DS(ON)Typ

Eoss@400V

Ω

0.8

1.4

Features：

l Fast Switching

l Low Gate Charge

l Low Reverse transfer capacitances

l 100% Single Pulse avalanche energy Test

l Halogen Free

l Zener-Protected

Applications：

Power switch circuit of adaptor, charger and LED.

Absolute（Tj= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage(V_GS=0V)

Continuous Drain Current T_C= 25 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

800

I_D

I_DM

V_GSS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

A/us

E_AS

dv/dt

MOSFET dv/dt ruggedness

dv/dt

di_f/dt

P_D

Maximum diode communication speed

Power Dissipation(T_C=25°C)

500

V_ESD(G-S)

T_J，T_stg

Gate source ESD (HBM-C= 100pF, R=1.5kΩ)

Operating and Storage Temperature Range

3000

–55…+150

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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