Datasheet > HPD650R650PC-G

HPD650R650PC-G

更新时间： 2024-04-09 18:59:30

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	463K
描述
TO-252

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HPD650R650PC-G 数据手册

HPD650R650PC-G

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Electrical Characteristics（Tj= 25℃ unless otherwise specified）：

OFF Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min.

650

Typ.

Max.

V_GS=0V, I_D=250µA

Drain to Source Breakdown Voltage

Bvdss Temperature Coefficient

V_DSS

0.70

ID=250uA

V/℃

ΔBV_DSS/ΔT_J

V_DS= 650V, V_GS= 0V,

Tj= 25℃

Drain to Source Leakage Current

µA

I_DSS

V_DS=520V, V_GS= 0V,

100

Tj = 125℃

V_GS=+30V V_DS= 0V,

V_GS=-30V V_DS= 0V,

Gate to Source Forward Leakage

Gate to Source Reverse Leakage

I_GSS(F)

I_GSS(R)

100

-100

ON Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min.

Typ. Max.

V_GS=10V,I_D=2.4A

Drain-to-Source On-Resistance

Gate Threshold Voltage

R_DS(ON)

V_GS(TH)

0.55 0.60

Ω

V_DS= V_GS, I_D= 250µA

2.0

4.0

Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics

Rating

Typ.

12.8

486

Parameter

Test Conditions

Symbol

Units

Min.

Max.

f = 1.0MHz

Gate resistance

R_g

Ω

Input Capacitance

C_iss

C_oss

C_rss

V_GS= 0V V_DS= 100V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

1.4

Resistive Switching Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min.

Typ.

Max.

Turn-on Delay Time

Rise Time

t_d(ON)

t_d(OFF)

t_f

9.0

6.2

I_D=3A V_DD= 400V

V_GS= 13V R_G=6.8Ω

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain (“Miller”)Charge

Gate Plateau Voltage

Q_g

Q_gs

2.5

7.6

4.7

I_D=3 A V_DD=400V

V_GS= 10V

Q_gd

V_plateau

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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