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HN58X2464TIE PDF预览

HN58X2464TIE

更新时间: 2024-01-31 23:53:59
品牌 Logo 应用领域
瑞萨 - RENESAS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
22页 160K
描述
Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)

HN58X2464TIE 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
零件包装代码:SOIC包装说明:TSSOP, TSSOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.81最大时钟频率 (fCLK):0.4 MHz
数据保留时间-最小值:10耐久性:100000 Write/Erase Cycles
I2C控制字节:1010DDDRJESD-30 代码:R-PDSO-G8
长度:4.4 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.1 mm串行总线类型:I2C
最大待机电流:0.000003 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:3 mm最长写入周期时间 (tWC):15 ms
写保护:HARDWARE

HN58X2464TIE 数据手册

 浏览型号HN58X2464TIE的Datasheet PDF文件第2页浏览型号HN58X2464TIE的Datasheet PDF文件第3页浏览型号HN58X2464TIE的Datasheet PDF文件第4页浏览型号HN58X2464TIE的Datasheet PDF文件第6页浏览型号HN58X2464TIE的Datasheet PDF文件第7页浏览型号HN58X2464TIE的Datasheet PDF文件第8页 
HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I  
AC Characteristics (Ta = 40 to +85°C, VCC = 1.8 to 5.5 V)  
Test Conditions  
Input pules levels:  
VIL = 0.2 × VCC  
VIH = 0.8 × VCC  
Input rise and fall time: 20 ns  
Input and output timing reference levels: 0.5 × VCC  
Output load: TTL Gate + 100 pF  
Parameter  
Symbol Min  
Typ  
Max  
400  
Unit  
kHz  
ns  
Notes  
Clock frequency  
Clock pulse width low  
Clock pulse width high  
Noise suppression time  
Access time  
fSCL  
tLOW  
tHIGH  
tI  
1200  
600  
ns  
50  
ns  
1
tAA  
100  
1200  
600  
600  
0
900  
ns  
Bus free time for next mode  
Start hold time  
tBUF  
ns  
tHD.STA  
tSU.STA  
tHD.DAT  
tSU.DAT  
tR  
ns  
Start setup time  
ns  
Data in hold time  
Data in setup time  
Input rise time  
ns  
100  
ns  
300  
300  
ns  
1
1
Input fall time  
tF  
ns  
Stop setup time  
tSU.STO  
tDH  
VCC = 2.7 V to 5.5 V tWC  
VCC = 1.8 V to 2.7 V tWC  
600  
50  
ns  
Data out hold time  
ns  
Write cycle time  
10  
ms  
ms  
2
2
15  
Notes: 1. This parameter is sampled and not 100% tested.  
2. tWC is the time from a stop condition to the end of internally controlled write cycle.  
Rev.5.00, Jan.14.2005, page 5 of 20  

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