HN58X2464TIE

更新时间： 2024-02-02 07:00:33

品牌	Logo	应用领域
瑞萨 - RENESAS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
22页	160K
描述
Two-wire serial interface 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)

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中文翻译

获取价格

技术参数
数据手册

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HN58X2464TIE 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
零件包装代码：	SOIC	包装说明：	TSSOP, TSSOP8,.25
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.51
风险等级：	5.81	最大时钟频率 (fCLK)：	0.4 MHz
数据保留时间-最小值：	10	耐久性：	100000 Write/Erase Cycles
I2C控制字节：	1010DDDR	JESD-30 代码：	R-PDSO-G8
长度：	4.4 mm	内存密度：	65536 bit
内存集成电路类型：	EEPROM	内存宽度：	8
功能数量：	1	端子数量：	8
字数：	8192 words	字数代码：	8000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	8KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装等效代码：	TSSOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	并行/串行：	SERIAL
电源：	2/5 V	认证状态：	Not Qualified
座面最大高度：	1.1 mm	串行总线类型：	I2C
最大待机电流：	0.000003 A	子类别：	EEPROMs
最大压摆率：	0.003 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	1.8 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	DUAL
宽度：	3 mm	最长写入周期时间 (tWC)：	15 ms
写保护：	HARDWARE

HN58X2464TIE 数据手册

HN58X2408I/HN58X2416I/HN58X2432I/HN58X2464I

Device Address (A0, A1, A2)

Eight devices can be wired for one common data bus line as maximum. Device address pins are used to

distinguish each device and device address pins should be connected to V_CCor V_SS. When device address

code provided from SDA pin matches corresponding hard-wired device address pins A0 to A2, that one

device can be activated. As for 8k to 16k EEPROM, whole or some device address pins don't need to be

fixed since device address code provided from the SDA pin is used as memory address signal.

Pin Connections for A0 to A2

Pin connection

Max connect

Memory size number

Notes

8k bit

V_CC/V_SS* ×*²

Use A0, A1 for memory address a8 and a9

16k bit

Use A0, A1, A2 for memory address a8, a9 and

a10

32k bit

64k bit

V_CC/V_SSV_CC/V_SSV_CC/V_SS

Notes: 1. “V_CC/V_SS” means that device address pin should be connected to V_CCor V_SS

2. × = Don’t care (Open is also approval.)

Write Protect (WP)

When the Write Protect pin (WP) is high, the write protection feature is enabled and operates as shown in

the following table. When the WP is low, write operation for all memory arrays are allowed. The read

operation is always activated irrespective of the WP pin status. WP should be fixed high or low during

operations since WP does not provide a latch function.

Write Protect Area

Write protect area

WP pin

status

8k bit

16k bit

32k bit

64k bit

V_IH

V_IL

Upper 1/2 (4k bit)

Upper 1/2 (8k bit)

Upper 1/4 (8k bit)

Upper 1/4 (16k bit)

Normal read/write operation

Rev.5.00, Jan.14.2005, page 8 of 20

1...5 6 789 10 11...22

中文翻译

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与HN58X2464TIE相关器件

型号	品牌	获取价格	描述	数据表
HN58X2464T-SR	HITACHI	获取价格	Two-wire serial interface 2k / 4k / 8k / 16k / 32k / 64k EEPROM
HN58X2502FPIAG	RENESAS	获取价格	Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
HN58X2502FPIE	RENESAS	获取价格	Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
HN58X2502I	RENESAS	获取价格	Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
HN58X2502IAG	RENESAS	获取价格	Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
HN58X2502TIAG	RENESAS	获取价格	Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
HN58X2502TIE	RENESAS	获取价格	Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
HN58X2504FPI	RENESAS	获取价格	512X8 SPI BUS SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOP-8
HN58X2504FPIAG	RENESAS	获取价格	Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory
HN58X2504FPIE	RENESAS	获取价格	Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory

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