5秒后页面跳转
HN58X2508IAG PDF预览

HN58X2508IAG

更新时间: 2024-01-17 01:54:14
品牌 Logo 应用领域
瑞萨 - RENESAS 存储可编程只读存储器
页数 文件大小 规格书
22页 597K
描述
Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory

HN58X2508IAG 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SOIC包装说明:4.40 X 3 MM, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSSOP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.79最大时钟频率 (fCLK):3 MHz
JESD-30 代码:R-PDSO-G8长度:4.4 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
认证状态:Not Qualified座面最大高度:1.1 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:3 mm最长写入周期时间 (tWC):8 ms
Base Number Matches:1

HN58X2508IAG 数据手册

 浏览型号HN58X2508IAG的Datasheet PDF文件第2页浏览型号HN58X2508IAG的Datasheet PDF文件第3页浏览型号HN58X2508IAG的Datasheet PDF文件第4页浏览型号HN58X2508IAG的Datasheet PDF文件第5页浏览型号HN58X2508IAG的Datasheet PDF文件第6页浏览型号HN58X2508IAG的Datasheet PDF文件第7页 
HN58X2508IAG Series  
HN58X2516IAG Series  
Serial Peripheral Interface  
8k EEPROM (1024-word × 8-bit)  
16k EEPROM (2048-word × 8-bit)  
Electrically Erasable and Programmable Read Only Memory  
REJ03C0299-0100  
Rev.1.00  
Nov.08.2006  
Description  
HN58X25xxx Series is the Serial Peripheral Interface compatible (SPI) EEPROM (Electrically Erasable and  
Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing  
advanced MONOS memory technology and CMOS process and low voltage circuitry technology. It also has a 32-byte  
page programming function to make it’s write operation faster.  
Features  
Single supply: 1.8 V to 5.5 V  
Serial Peripheral Interface compatible (SPI bus)  
SPI mode 0 (0,0), 3 (1,1)  
Clock frequency: 5 MHz (2.5 V to 5.5 V), 3 MHz (1.8 V to 5.5 V)  
Power dissipation:  
Standby: 3 µA (max)  
Active (Read): 2.5 mA (max)  
Active (Write): 3.0 mA (max)  
Automatic page write: 32-byte/page  
Write cycle time: 5 ms (2.5 V min), 8 ms (1.8 V min)  
Endurance: 106 Erase/Write Cycles  
Data retention: 10 Years  
Small size packages: SOP-8pin, TSSOP-8pin  
Shipping tape and reel  
TSSOP-8pin: 3,000 IC/reel  
SOP-8pin:  
Temperature range: 40 to +85 °C  
Lead free product.  
2,500 IC/reel  
Rev.1.00, Nov.08.2006, page 1 of 20  

与HN58X2508IAG相关器件

型号 品牌 描述 获取价格 数据表
HN58X2508TIAG RENESAS Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory

获取价格

HN58X2508TIE RENESAS Electrically Erasable and Programmable Read Only Memory

获取价格

HN58X25128 RENESAS Serial Peripheral Interface 128k EEPROM (16-k

获取价格

HN58X25128FPIAG RENESAS Serial Peripheral Interface Electrically Erasable and Programmable Read Only Memory

获取价格

HN58X25128FPIE RENESAS Serial Peripheral Interface 128k EEPROM (16-k

获取价格

HN58X25128I RENESAS Serial Peripheral Interface 128k EEPROM (16-k

获取价格