Datasheet > HMG15N60

HMG15N60

更新时间： 2024-12-01 01:11:43

品牌	Logo	应用领域
华之美 - HMSEMI		双极性晶体管
页数	文件大小	规格书
8页	2024K
描述
600V, 15A, Trench FS II IGBT

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HMG15N60 数据手册

HMG15N60D/HMG15N60/HMG15N60F

600V, 15A, Trench FS II IGBT

General Description:

Using H&M SEMI's proprietary trench design and advanced FS (field stop)

second generation technology, the 600V Trench FS II IGBT offers superior

conduction and switching performances, and easy parallel operation;

Features

Trench FSII Technology offering

 Very low V_CE

sat

）

（

 High speed switching

 Positive temperature coefficient in V_CE

 Very tight parameter distribution

sat

（

）

 High ruggedness, temperature stable behavior

Schematic diagram

Application

 Air Condition

 Inverters

 Motor drives

Package Marking and Ordering Information

Device Marking

Device

Device Package

HMG15N60D

HMG15N60

HMG15N60F

TO-263

HMG15N60D

HMG15N60

HMG15N60F

TO-220

TO-220F

TO-263

TO-220

TO-220F

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

HMG15N60D

Symbol

Parameter

HMG15N60F

Units

HMG15N60

V_CES

V_GES

Collector-Emitter Voltage

600

±30

Gate- Emitter Voltage

Collector Current

105

30*

15*

I_C

Collector Current @T_C= 100 °C

I_Cplus

Pulsed Collector Current，t_plimited by T_jmax

turn off safe operating area，VCE=600V，Tj=150℃

Diode Continuous Forward Current @T_C= 100 °C

Diode Maximum Forward Current

Power Dissipation @ T_C= 25°C

I_F

15*

I_FM

℃

P_D

Power Dissipation @T_C= 100 °C

12.8

T_J,T_stg

T_L

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

-55 to +150

260

Short circuit withstand time V_GE=15.0V, V_CC≤ 400V,

Allowed number of short circuits<1000Time between

short circuits:≥1.0s,T_j≤150℃

t_sc

12 3 4 5 6 7 8

中文翻译

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