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HMD8M32M16EBG-5 PDF预览

HMD8M32M16EBG-5

更新时间： 2024-01-08 16:07:10
品牌 Logo 应用领域
HANBIT 存储动态存储器
页数 文件大小 规格书
7页 89K
描述
32Mbyte(8Mx32) 72-pin EDO MODE 2K Ref. SIMM Design 5V

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HMD8M32M16EBG-5 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.75
Is Samacsys：NBase Number Matches：1

HMD8M32M16EBG-5 数据手册

 浏览型号HMD8M32M16EBG-5的Datasheet PDF文件第1页浏览型号HMD8M32M16EBG-5的Datasheet PDF文件第2页浏览型号HMD8M32M16EBG-5的Datasheet PDF文件第3页浏览型号HMD8M32M16EBG-5的Datasheet PDF文件第4页浏览型号HMD8M32M16EBG-5的Datasheet PDF文件第6页浏览型号HMD8M32M16EBG-5的Datasheet PDF文件第7页 
HANBit  
HMD8M32M16EBG  
Column address hold time  
tCAH  
tRAL  
tRCS  
tRCH  
tRRH  
tWCH  
tWCR  
tWP  
8
10  
30  
0
ns  
ns  
ns  
ns  
Column Address to /RAS lead time  
Read command set-up time  
Read command hold referenced to /CAS  
Read command hold referenced to /RAS  
Write command hold time  
25  
0
0
0
0
0
ns  
10  
50  
10  
13  
8
10  
55  
10  
10  
10  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Write command hold referenced to /RAS  
Write command pulse width  
Write command to /RAS lead time  
Write command to /CAS lead time  
Data-in set-up time  
tRWL  
tCWL  
tDS  
0
Data-in hold time  
tDH  
8
10  
32  
0
Refresh period  
tREF  
tWCS  
tCSR  
tCHR  
tRPC  
tCPA  
tCP  
32  
Write command set-up time  
/CAS setup time (C-B-R refresh)  
/CAS hold time (C-B-R refresh)  
/RAS precharge to /CAS hold time  
Access time from /CAS precharge  
/CAS precharge time (Fast page)  
/RAS pulse width (Fast page )  
/W to /RAS precharge time (C-B-R  
refresh)  
0
5
5
10  
5
10  
5
30  
35  
8
10  
tRASP  
tWRP  
50  
10  
200K  
60  
10  
200K  
/W to /RAS hold time (C-B-R refresh)  
tWRH  
10  
10  
ns  
NOTES  
1.An initial pause of 200ms is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles  
before proper device operation is achieved.  
2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between  
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.  
3.Measured with a load equivalent to 1TTL loads and 100pF  
4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD  
is greater than the specified tRCD(max) limit, then access time is controlled exclusively by tCAC  
5.Assumes that tRCD ³ tRCD(max)  
6. tAR, tWCR, tDHR are referenced to tRAD(max)  
.
7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to VOH  
or VOL  
.
8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter.  
They are included in the data sheet as electrical characteristic only. If tWCS  
³
tWCS(min) the cycle is an early write  
cycle and the data out pin will remain high impedance for the duration of the cycle.  
9. Either tRCH or tRRH must be satisfied for a read cycle.  
10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in read-  
write cycles.  
11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference  
point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA  
.
URL:www.hbe.co.kr  
REV.1.0 (August.2002)  
- 5 -  
HANBit Electronics Co.,Ltd.  
1234567

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