是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | HVQCCN, |
针数: | 16 | Reach Compliance Code: | compliant |
风险等级: | 5.66 | JESD-30 代码: | S-XQCC-N16 |
JESD-609代码: | e3 | 长度: | 3 mm |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 16 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装主体材料: | UNSPECIFIED |
封装代码: | HVQCCN | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE | 峰值回流温度(摄氏度): | 260 |
座面最大高度: | 0.9 mm | 标称供电电压: | 5 V |
表面贴装: | YES | 电信集成电路类型: | TELECOM CIRCUIT |
温度等级: | INDUSTRIAL | 端子面层: | Tin (Sn) |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 3 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HMC862LP3E | HITTITE |
获取价格 |
0.1 - 15 GHz LOW NOISE PROGRAMMABLE DIVIDER (N = 1, 2, 4, 8) | |
HMC862LP3E | ADI |
获取价格 |
0.1 - 15 GHz Low Noise Programmable Divider (N = 1, 2, 4, 8) SMT | |
HMC862LP3ETR | ADI |
获取价格 |
0.1 - 15 GHz Low Noise Programmable Divider (N = 1, 2, 4, 8) SMT | |
HMC863 | HITTITE |
获取价格 |
GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - | |
HMC863_09 | HITTITE |
获取价格 |
GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - | |
HMC863_10 | HITTITE |
获取价格 |
GaAs pHEMT MMIC ? WATT POWER AMPLIFIER, 24 - 29.5 GHz | |
HMC863ALC4 | ADI |
获取价格 |
GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - | |
HMC863ALC4TR | ADI |
获取价格 |
GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - | |
HMC863ALC4TR-R5 | ADI |
获取价格 |
GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - | |
HMC863ALP4E | ADI |
获取价格 |
GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 22 - |