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HMC863

更新时间: 2024-09-17 05:36:15
品牌 Logo 应用领域
HITTITE 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
8页 296K
描述
GaAs pHEMT MMIC ½ WATT POWER AMPLIFIER, 24 - 29.5 GHz

HMC863 技术参数

生命周期:TransferredReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
特性阻抗:50 Ω构造:COMPONENT
增益:22 dB最大输入功率 (CW):26 dBm
最大工作频率:29500 MHz最小工作频率:24000 MHz
最高工作温度:85 °C最低工作温度:-55 °C
射频/微波设备类型:WIDE BAND MEDIUM POWERBase Number Matches:1

HMC863 数据手册

 浏览型号HMC863的Datasheet PDF文件第2页浏览型号HMC863的Datasheet PDF文件第3页浏览型号HMC863的Datasheet PDF文件第4页浏览型号HMC863的Datasheet PDF文件第5页浏览型号HMC863的Datasheet PDF文件第6页浏览型号HMC863的Datasheet PDF文件第7页 
HMC863  
v00.1109  
GaAs pHEMT MMIC ½ WATT  
POWER AMPLIFIER, 24 - 29.5 GHz  
Typical Applications  
The HMC863 is ideal for:  
• Point-to-Point Radios  
• Point-to-Multi-Point Radios  
• VSAT  
Features  
Saturated Output Power: +28 dBm @ 18% PAE  
High Output IP3: +39 dBm  
High Gain: 27 dB  
3
DC Supply: +6V @ 375mA  
50 Ohm Matched Input/Output  
Die Size: 2.41 x 0.95 x 0.1 mm  
• Military & Space  
Functional Diagram  
General Description  
The HMC863 is a three stage GaAs pHEMT MMIC  
1/2 Watt Power Amplifier which operates between  
24 and 29.5 GHz. The HMC863 provides 27 dB of  
gain, and +27 dBm of saturated output power at 18%  
PAE from a +6V supply. The RF I/Os are DC bloc-  
ked and matched to 50 Ohms for ease of integration  
into Multi-Chip-Modules (MCMs). All data is taken with  
the chip in a 50 Ohm test fixture connected via 0.025  
mm (1 mil) diameter wire bonds of length 0.31 mm  
(12 mils).  
Electrical Specifications, TA = +25° C, Vdd = +6V, Idd = 375mA[1]  
Parameter  
Min.  
Typ.  
24 - 27  
27  
Max.  
Min.  
Typ.  
27 - 29.5  
25  
Max.  
Units  
GHz  
dB  
Frequency Range  
Gain  
24  
22  
Gain Variation Over Temperature  
Input Return Loss  
0.0375  
17  
0.05  
11  
dB/ °C  
dB  
Output Return Loss  
15  
11  
dB  
Output Power for 1 dB Compression (P1dB)  
Saturated Output Power (Psat)  
Output Third Order Intercept (IP3)[2]  
24  
27  
23  
26  
dBm  
dBm  
dBm  
mA  
28  
27  
37  
38  
Total Supply Current (Idd)  
375  
375  
[1] Adjust Vgg between -2 to 0V to achieve Idd= 375mA typical.  
[2] Measurement taken at +6V @ 375mA, Pout / Tone = +16 dBm  
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:  
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373  
Order On-line at www.hittite.com  
3 - 142  

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