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HMC689LP4TR PDF预览

HMC689LP4TR

更新时间: 2024-11-26 13:08:23
品牌 Logo 应用领域
HITTITE 电信集成电路蜂窝电话电路电信电路放大器信息通信管理
页数 文件大小 规格书
8页 625K
描述
RF and Baseband Circuit, BICMOS, PQCC24, PLASTIC, QFN-24

HMC689LP4TR 技术参数

生命周期:Transferred包装说明:HVQCCN,
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.6Is Samacsys:N
JESD-30 代码:S-PQCC-N24长度:4 mm
功能数量:1端子数量:24
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度:1 mm标称供电电压:5 V
表面贴装:YES技术:BICMOS
电信集成电路类型:RF AND BASEBAND CIRCUIT温度等级:INDUSTRIAL
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD宽度:4 mm
Base Number Matches:1

HMC689LP4TR 数据手册

 浏览型号HMC689LP4TR的Datasheet PDF文件第2页浏览型号HMC689LP4TR的Datasheet PDF文件第3页浏览型号HMC689LP4TR的Datasheet PDF文件第4页浏览型号HMC689LP4TR的Datasheet PDF文件第5页浏览型号HMC689LP4TR的Datasheet PDF文件第6页浏览型号HMC689LP4TR的Datasheet PDF文件第7页 
HMC689LP4 / 689LP4E  
v01.1010  
BiCMOS MMIC MIXER W/ INTEGRATED  
LO AMPLIFIER, 2.0 - 2.7 GHz  
Typical Applications  
The HMC689LP4(E) is Ideal for:  
Features  
High Input IP3: +32 dBm  
• Cellular/3G & LTE/WiMAX/4G  
• Basestations & Repeaters  
• GSM, CDMA & OFDM  
Low Conversion Loss: 7.5 dB  
Low LO Drive: 0 dBm  
10  
Optimized for High Side LO Input  
Upconversion & Downconversion Applications  
24 Lead 4x4mm SMT Package: 16mm2  
• Transmitters and Receivers  
Functional Diagram  
General Description  
The HMC689LP4(E) is a high dynamic range passive  
MMIC mixer with integrated LO amplifier in a 4x4 SMT  
QFN package covering 2.0 - 2.7 GHz. Excellent input  
IP3 performance of +32 dBm for down conversion is  
provided for 3G & 4G GSM/CDMA applications at an  
LO drive of 0 dBm. With an input 1 dB compression  
of +23 dBm, the RF port will accept a wide range of  
input signal levels. Conversion loss is 7.5 dB typical.  
The DC to 800 MHz IF frequency response will sat-  
isfy GSM/CDMA transmit or receive frequency plans.  
The HMC689LP4(E) is pin for pin compatible with the  
HMC688LP4(E) which is a 2.0 - 2.7 MHz mixer with  
LO amplifier, amplifier is optimized for low side LO  
applications.  
Electrical Specifications,  
TA = +25° C, IF = 300 MHz, LO = 0 dBm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.8V*  
Parameter  
Min.  
Typ.  
2.0 - 2.7  
2 - 3  
DC - 800  
7.5  
Max.  
Units  
GHz  
GHz  
MHz  
dB  
Frequency Range, RF  
Frequency Range, LO  
Frequency Range, IF  
Conversion Loss  
11  
Noise Figure (SSB)  
LO to RF Isolation  
7.5  
dB  
26  
20  
24  
34  
dB  
LO to IF Isolation  
26  
dB  
RF to IF Isolation  
30  
dB  
IP3 (Input)  
32  
dBm  
dBm  
dBm  
mA  
1 dB Compression (Input)  
LO Drive Input Level (Typical)  
Supply Current (Icc total)  
23  
-3 to +3  
152  
185  
* Unless otherwise noted all measurements performed as downconverter with high side LO & IF = 300 MHz.  
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824  
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com  
Application Support: Phone: 978-250-3343 or apps@hittite.com  
10 - 1  

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