Datasheet > HMC659-Die

HMC659-Die

更新时间： 2023-12-20 18:46:04

品牌	Logo	应用领域
亚德诺 - ADI		放大器功率放大器
页数	文件大小	规格书
8页	599K
描述
功率放大器芯片，DC - 15 GHz

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HMC659-Die 数据手册

HMC659

v02.0217

GaAs PHEMT MMIC

POWER AMPLIFIER, DC - 15 GHz

Pad Descriptions

Pad Number

Function

Description

Interface Schematic

This pad is DC coupled and matched

to 50 Ohms. Blocking capacitor is required.

Gate control 2 for ampliﬁer. Attach bypass

capacitor per application circuit herein. For nominal

operation +3V should be applied to Vgg2.

Vgg2

Low frequency termination. Attach bypass

capacitor per application circuit herein.

ACG1

ACG2

Low frequency termination. Attach bypass

capacitor per application circuit herein.

RF output for ampliﬁer. Connect DC bias (Vdd) network to

provide drain current (Idd). See application circuit herein.

OUT & Vdd

ACG3

Low frequency termination. Attach bypass

capacitor per application circuit herein.

Gate control 1 for ampliﬁer. Attach bypass

capacitor per application circuit herein. Please

follow “MMIC Ampliﬁer Biasing Procedure”

application note.

Vgg1

GND

Die Bottom

Die bottom must be connected to RF/DC ground.

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106

Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

1...3 4 567 8

下载PDF

与HMC659-Die相关器件

型号	品牌	描述	获取价格	数据表
HMC659LC5	HITTITE	GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz	获取价格
HMC659LC5	ADI	功率放大器，采用SMT封装，DC - 15 GHz	获取价格
HMC659LC5RTR	HITTITE	RF/Microwave Amplifier, 1 Func,	获取价格
HMC659LC5TR	HITTITE	暂无描述	获取价格
HMC65DRAH	ETC	CONN EDGE DUAL FMALE 130POS .100	获取价格
HMC65DRAH-S734	ETC	CONN EDGE DUAL FMALE 130POS .100	获取价格