Datasheet > HMC279MS8G_10

HMC279MS8G_10

更新时间： 2022-03-18 04:13:01

品牌	Logo	应用领域
HITTITE		驱动器放大器
页数	文件大小	规格书
6页	177K
描述
GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz

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HMC279MS8G_10 数据手册

HMC279MS8G

v02.0701

GaAs MMIC DRIVER AMPLIFIER

2.5 - 4.2 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

RF Input Power (Vdd = + 3.0 Vdc)

Channel Temperature

+8.0 Vdc

-10 dBm

150 °C

Continuous Pdiss (T = 85 °C)

(derate 20 mW/°C above 85 °C)

1.3 W

Thermal Resistance

(channel to ground paddle)

50 °C/W

Storage Temperature

Operating Temperature

-65 to +150 °C

-40 to +85 °C

%,%#42/34!4)# 3%.3)4)6% $%6)#%

/"3%26% (!.$,).' 02%#!54)/.3

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEADFRAME MATERIAL: COPPER ALLOY

3. LEADFRAME PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.

6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.

7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

8. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

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