Datasheet > HMC282

HMC282

更新时间： 2024-02-11 01:05:38

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	111K
描述
GaAs MMIC LOW NOISE AMPLIFIER 36 - 40 GHz

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技术参数
数据手册

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HMC282 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	DIE OR CHIP	Reach Compliance Code：	unknown
风险等级：	5.84	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	21 dB
最大输入功率 (CW)：	13 dBm	JESD-609代码：	e4
最大工作频率：	40000 MHz	最小工作频率：	36000 MHz
最高工作温度：	85 °C	最低工作温度：	-55 °C
封装等效代码：	DIE OR CHIP	电源：	3.5 V
射频/微波设备类型：	WIDE BAND LOW POWER	子类别：	RF/Microwave Amplifiers
最大压摆率：	140 mA	技术：	GAAS
端子面层：	Gold (Au)	Base Number Matches：	1

HMC282 数据手册

HMC282

MICROWAVE CORPORATION

GaAs MMIC LOW NOISE AMPLIFIER 36 - 40 GHz

V01.0700

FEBRUARY 2001

Features

General Description

NOISE FIGURE: 3.5 dB

The HMC282 chip is a four stage GaAs MMIC

Low Noise Amplifier (LNA) which covers the

frequency range of 36 to 40 GHz. The chip can

easily be integrated into Multi-Chip Modules

(MCMs) due to its small (2.30 mm²) size. The

chip utilizes a GaAs PHEMT process offering 26

dB gain from a bias supply of +3.5V @ 90 mA with

a noise figure of 3.5 dB. This LNA can be used in

millimeterwave point-to-point radios, VSAT, and

other SATCOM applications. All data is with the

chip in a 50 ohm test fixture connected via ribbon

bonds of minimal length. The HMC282 may be

used in conjunction with the HMC259 mixer to

realize a millimeterwave system receiver.

STABLE GAIN vs. TEMPERATURE: 26dB ± 1.2dB

SMALL SIZE: 1.11 mm x 2.07 mm

IDEAL FOR 38 GHz RADIOS, E1 & T1

Guaranteed Performance, Vdd = +3.5V*, Idd = 90mA, -55 to +85 deg C

Parameter

Min.

Typ.

Max.

Min.

Typ.

Max.

Units

GHz

Frequency Range

Gain

36 - 40

37 - 39

Gain Flatness (Any 1Ghz BW)

Noise Figure

± 1

3.8

5.8

3.5

5.3

Input Return Loss

Output Return Loss

Reverse Isolation

Output Power for 1dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Voltage (Vdd)

dBm

Vdc

3.25

3.5

3.75

140

3.25

3.5

3.75

140

Gate Bias Voltage (Vg1, 2 & Vg3, 4)

-0.45 / -0.3

Supply Current (Idd)

(Vdd = +3.5V, Vg1, 2, 3, 4 = -0.15V Typ.)

* Vdd = +3.5V , adjust Vg1, 2 & Vg3, 4 between-2.0 to +0.4V to achieve Idd = 90 mA typical.

12 Elizabeth Drive, Chelmsford, MA 01824

Phone: 978-250-3343

Fax: 978-250-3373

Web Site: www.hittite.com

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