HMC283LM1

更新时间： 2024-02-21 02:06:43

品牌	Logo	应用领域
HITTITE		放大器射频微波
页数	文件大小	规格书
8页	368K
描述
SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz

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技术参数
数据手册

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HMC283LM1 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	LCC8,.2SQ,40
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	15 dB
最大输入功率 (CW)：	8 dBm	JESD-609代码：	e4
安装特点：	SURFACE MOUNT	端子数量：	8
最大工作频率：	40000 MHz	最小工作频率：	17000 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
封装等效代码：	LCC8,.2SQ,40	电源：	3.5 V
射频/微波设备类型：	WIDE BAND LOW POWER	子类别：	RF/Microwave Amplifiers
最大压摆率：	330 mA	表面贴装：	YES
技术：	GAAS	端子面层：	Gold (Au) - with Nickel (Ni) barrier
Base Number Matches：	1

HMC283LM1 数据手册

HMC283LM1

v04.1201

MICROWAVE CORPORATION

SMT MEDIUM POWER GaAs MMIC

AMPLIFIER, 17 - 40 GHz

Typical Applications

Features

SMT mmWave Package

Psat Output Power: +21 dBm

High Gain: 21 dB

The HMC283LM1 is ideal for:

• Millimeterwave Point-to-Point Radios

• LMDS

No External Matching Required

• SATCOM

Functional Diagram

General Description

The HMC283LM1 is a Medium Power Ampliﬁer (MPA)

in a SMT leadless chip carrier package covering 17 to

40 GHz. The LM1 is a true surface mount broadband

millimeterwave package offering low loss & excellent

I/O match preserving MMIC chip performance. Utilizing

a GaAs PHEMT process, the device offers 20 dB gain

and +21 dBm ouput power from a bias supply of +3.5V

@ 300mA. As an alternative to chip-and-wire hybrid

assemblies the HMC283LM1 eliminates the need for

wirebonding, thereby providing a consistent connec-

tion interface for the customer. The ampliﬁer may be

used as a frequency doubler. A built-in-test pad (Vdet)

allows monitoring of microwave output power. All data

is with the non-hermetic, epoxy sealed LM1 packaged

MPA device mounted in a 50 ohm test ﬁxture.

Electrical Speciﬁcations,T_A= +25° C, Vdd= +3.5V*, ldd = 300 mA

Parameter

Min.

Typ.

17 - 40

Max.

Min.

Typ.

21 - 30

Max.

0.07

Units

GHz

Frequency Range

Gain

Gain Variation over Temperature

Input Return Loss

0.05

0.07

0.05

dB/°C

Output Return Loss

Reverse Isolation

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

Supply Current (Idd)

300

330

300

330

*Vdd = +3.5V, adjust Vgg = Vgg1, Vgg2 between -2.0 to +0.4V to achieve Idd = 300 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

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