HMC280MS8G / 280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
8
Typical Applications
Features
The HMC280MS8G / HMC280MS8GE is ideal for:
Psat Output Power: +24 dBm
Output IP3: +38 dBm
• UNII & HiperLAN
• ISM
High Gain: 18 dB
Single Supply: +3.6V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC280MS8G & HMC280MS8GE are +3.6V
GaAs MMIC power amplifiers covering 5 to 6 GHz.
The device is packaged in a low cost, surface mount
8 lead MSOP plastic package with an exposed base
paddle for improved RF ground and thermal dissipa-
tion. The amplifier provides 18 dB of gain and 24 dBm
Psat while operating from a single positive supply.
External component requirements are minimal with
the amplifier occupying less than 0.023 sq. in. (14.6
sq. mm). All data is taken with the amplifier assem-
bled into a 50 ohm test fixture with the exposed base
paddle connected to RF ground.
Electrical Specifications, TA = +25° C, Vdd= +3.6V
Parameter
Frequency Range
Gain
Min.
14
Typ.
5.0 - 6.0
19
Max.
23
Units
GHz
dB
Gain Flatness
1.0
dB
Input Return Loss
Reverse Isolation
8
12
dB
40
44
dB
5.0 - 5.5 Ghz
Output Power for 1 dB Compression (P1dB)
5.0 - 6.0 Ghz
20
18
23
22
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
21
33
24
38
dBm
dBm
dB
13
Supply Current (Idd)(Vdd1 = Vdd2 = +3.6 Vdc)
480
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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