HMC283

更新时间： 2024-01-31 11:29:54

品牌	Logo	应用领域
HITTITE		射频和微波射频放大器微波放大器功率放大器
页数	文件大小	规格书
8页	285K
描述
GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HMC283 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	DIE OR CHIP
Reach Compliance Code：	compliant	风险等级：	5.84
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	COMPONENT	增益：	16 dB
最大输入功率 (CW)：	8 dBm	JESD-609代码：	e4
功能数量：	1	最大工作频率：	40000 MHz
最小工作频率：	17000 MHz	最高工作温度：	85 °C
最低工作温度：	-55 °C	封装等效代码：	DIE OR CHIP
电源：	3.5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	400 mA
技术：	GAAS	端子面层：	Gold (Au)
Base Number Matches：	1

HMC283 数据手册

HMC283

v02.0500

MICROWAVE CORPORATION

GaAs MMIC MEDIUM POWER

AMPLIFIER, 17 - 40 GHz

Typical Applications

The HMC283 MPA is ideal for:

Features

High Gain: 21 dB

• Millimeterwave Point-to-Point Radios

Psat Output Power: +21 dBm

Wideband Performance: 17 - 40 GHz

Small Chip Size: 0.88 mm x 1.72 mm

• VSAT

• SATCOM

Functional Diagram

General Description

The HMC283 chip is a four stage GaAs MMIC

Medium Power Ampliﬁer (MPA) which covers the fre-

quency range of 17 to 40 GHz. The chip can easily

be integrated into Multi-Chip Modules (MCMs) due

to its small (1.62 mm²) size.The chip utilizes a GaAs

PHEMT process offering 20 dB gain and +21 dBm

output power from a bias supply of +3.5V @ 300mA.

The HMC283 may be used as a frequency doubler.

A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring

microwave output power. All data is with the chip

in a 50 ohm test ﬁxture connected via 0.076mm x

0.0127mm (3mil x 0.5mil) ribbon bonds of minimal

length 0.31mm (<12mils).

Electrical Speciﬁcations,T_A= +25° C, Vdd= +3.5V*, ldd = 300 mA

Parameter

Min.

Typ.

17 - 40

Max.

Units

GHz

Frequency Range

Gain

Gain Flatness (Any 1 GHz BW)

Input Return Loss

±0.8

Output Return Loss

Reverse Isolation

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Noise Figure

dBm

Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.)

300

400

*Vdd = Vd1, 2, 3, 4 connected to +3.5V, adjusting Vgg = Vg1, 2, 3, 4 between -2.0 to +0.4V to achieve Idd = 300 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 10

12 3 4 5 6 7 8

下载PDF

与HMC283相关器件

型号	品牌	描述	获取价格	数据表
HMC283_07	HITTITE	GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz	获取价格
HMC283_08	HITTITE	GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz	获取价格
HMC283_10	HITTITE	GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz	获取价格
HMC283LM1	HITTITE	SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz	获取价格
HMC283LM1_01	HITTITE	SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz	获取价格
HMC283LM1_06	HITTITE	SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz	获取价格