Datasheet > HMA81GU6MFR8N-UH

HMA81GU6MFR8N-UH

更新时间： 2022-02-26 10:40:26

品牌	Logo	应用领域
海力士 - HYNIX		动态存储器双倍数据速率
页数	文件大小	规格书
72页	1280K
描述
DDR4 SDRAM Unbuffered DIMM Based on 8Gb M-die

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HMA81GU6MFR8N-UH 数据手册

Description

SK hynix Unbuffered DDR4 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line

Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices.

These Unbuffered SDRAM DIMMs are intended for use as main memory when installed in systems such as

PCs and workstations.

Features

• Power Supply: VDD=1.2V (1.14V to 1.26V)

• VDDQ = 1.2V (1.14V to 1.26V)

• VPP - 2.5V (2.375V to 2.75V)

• VDDSPD=2.25V to 3.6V

• Functionality and operations comply with the DDR4 SDRAM datasheet

• 16 internal banks

• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or dif-

ferent bank group accesses are available

• Data transfer rates: PC4-2400, PC4-2133, PC4-1866, PC4-1600

• Bi-Directional Differential Data Strobe

• 8 bit pre-fetch

• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)

• Supports ECC error correction and detection

• On-Die Termination (ODT)

• Temperature sensor with integrated SPD

• This product is in compliance with the RoHS directive.

• Per DRAM Addressability is supported

• Internal Vref DQ level generation is available

Ordering Information

# of

ranks

Part Number

Density

Organization

Component Composition

HMA81GU6MFR8N-TF/UH

HMA81GU7MFR8N-TF/UH

HMA82GU6MFR8N-TF/UH

HMA82GU7MFR8N-TF/UH

8GB

1Gx64

1Gx72

2Gx64

2Gx72

1Gx8(H5AN8G8NMFR)*8

1Gx8(H5AN8G8NMFR)*9

1Gx8(H5AN8G8NMFR)*16

1Gx8(H5AN8G8NMFR)*18

16GB

Rev. 1.2 / Mar.2016

1 234 5 6 7...72

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