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HM67S36130BP-7 PDF预览

HM67S36130BP-7

更新时间: 2024-11-23 19:46:31
品牌 Logo 应用领域
瑞萨 - RENESAS 静态存储器内存集成电路
页数 文件大小 规格书
25页 136K
描述
128KX36 STANDARD SRAM, 7ns, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

HM67S36130BP-7 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact Manufacturer零件包装代码:BGA
包装说明:14 X 22 MM, 1.27 MM PITCH, BGA-119针数:119
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.7
最长访问时间:7 nsJESD-30 代码:R-PBGA-B119
JESD-609代码:e0长度:22 mm
内存密度:4718592 bit内存集成电路类型:STANDARD SRAM
内存宽度:36功能数量:1
端子数量:119字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX36封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:2.35 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

HM67S36130BP-7 数据手册

 浏览型号HM67S36130BP-7的Datasheet PDF文件第2页浏览型号HM67S36130BP-7的Datasheet PDF文件第3页浏览型号HM67S36130BP-7的Datasheet PDF文件第4页浏览型号HM67S36130BP-7的Datasheet PDF文件第5页浏览型号HM67S36130BP-7的Datasheet PDF文件第6页浏览型号HM67S36130BP-7的Datasheet PDF文件第7页 
HM67S36130 Series  
4M Synchronous Fast Static RAM (128k-words × 36-bits)  
ADE-203-659C (Z)  
Rev. 3  
Jul. 27, 1998  
Features  
3.3V ± 5% Operation  
LVCMOS Compatible Input and Output  
Synchronous Operation  
Internal self-timed Late Write  
Asynchronous G Output Control  
Byte Write Control  
(4 byte write selects, one for each 9 bits)  
Power down mode is provided  
Differential PECL Clock Inputs  
Boundary Scan  
Protocol Single Clock Register-Latch Mode  
Ordering Information  
Type Number  
Cycle Time  
Package  
HM67S36130BP-7  
7.0 ns  
119 Bump 1. 27 mm  
14 mm × 22 mm BGA (BP-119A)  
All power supply and ground pins must be connected for proper operation of the device. This document  
contains information on a new product. Specifications and information contained herein are subject to  
change without notice.  

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