Datasheet > HM62A16100I

HM62A16100I

更新时间： 2024-02-19 02:21:10

品牌	Logo	应用领域
瑞萨 - RENESAS		静态存储器
页数	文件大小	规格书
17页	141K
描述
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit)

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HM62A16100I 数据手册

HM62A16100I Series

Wide Temperature Range Version

16 M SRAM (1-Mword × 16-bit)

REJ03C0053-0001Z

Preliminary

Rev. 0.01

Jun.02.2003

Description

The Renesas HM62A16100I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. HM62A16100I

Series has realized higher density, higher performance and low power consumption by employing CMOS

process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it

is suitable for battery backup systems. It has the package variations of 48-bump chip size package with

0.75 mm bump pitch for high density surface mounting.

Features

•

Single 1.8 V supply: 1.65 V to 2.2 V

Fast access time: 70 ns (max)

Power dissipation:

Active: 3.6 mW/MHz (typ)

Standby: 0.9 µW (typ)

•

Completely static memory.

No clock or timing strobe required

Equal access and cycle times

Common data input and output.

Three state output

•

Battery backup operation.

2 chip selection for battery backup

Temperature range: −40 to +85°C

Preliminary: The specification of this device are subject to change without notice. Please contact your

nearest Renesas Technology’s Sales Dept. regarding specification.

Rev.0.01, Jun.02.2003, page 1 of 17

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