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HM628512P-7 PDF预览

HM628512P-7

更新时间: 2024-11-24 20:25:27
品牌 Logo 应用领域
日立 - HITACHI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 89K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDIP32, 0.600 INCH, PLASTIC, DIP-32

HM628512P-7 数据手册

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HM628512 Series  
524288-word × 8-bit High Speed CMOS Static RAM  
ADE-203-236F (Z)  
Rev. 6.0  
Jun. 9, 1995  
Description  
The Hitachi HM628512 is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes igher density, higher  
performance and low power consumption by employing 0.5 µm Hi-CMOS process technology. The device,  
packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II or 600-mil plastic DIP, is  
available for high density mounting. LP-version is suitable for battery backup system.  
Features  
High speed: Fast access time:  
55/65/70 ns (max)  
Low power  
Standby: 10 µW (typ) (L/L-SL version)  
Operation: 75 mW (typ) (f = 1 MHz)  
Single 5 V supply  
Completely static memory  
No clock or timing strobe required  
Equal access and cycle times  
Common data input and output: Three state output  
Directly TTL compatible: All inputs and outputs  
Capability of battery backup operation (L/L-SL version)  

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