Datasheet > HM5N50K

HM5N50K

更新时间： 2024-11-16 01:15:43

品牌	Logo	应用领域
华之美 - HMSEMI		/
页数	文件大小	规格书
9页	560K
描述
500V N-Channel MOSFET

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HM5N50K 数据手册

HM5N50K/HM5N50I

500V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using SL semi‘s

advanced planar stripe DMOS technology.

•

4.5A, 500V, R_DS(on)= 2.0Ω @V_GS= 10 V

Low gate charge ( typical 16nC)

High ruggedness

Fast switching

100% avalanche tested

Improved dv/dt capability

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency sw itched mode power supplies,

active power factor correction based on half bridge

topology.

_{D

●

◀

▲

●

{

TO-251

TO-252

^{S

Absolute Maximum Ratings

T = 25°Cunless otherwise noted

Symbol

V_DSS

Parameter

HM5N50K

HM5N50I

Units

Drain-Source Voltage

500

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

4.5

2.6

4.5*

2.6 *

18 *

I_DM

(Note 1)

Drain Current

V_GSS

E_AS

E_AR

Gate-Source Voltage

± 30

210

10.0

4.5

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

V/ns

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25°C)

dv/dt

P_D

100

0.8

- Derate above 25°C

Operating and Storage Temperature Range

0.26

W/°C

°C

T_J, T_STG

T_L

-55 to +150

300

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

HM5N50K

HM5N50I

3.79

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.25

0.5

R_θCS

R_θJA

62.5

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

12 3 4 5 6 7...9

中文翻译

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