5秒后页面跳转
HM365788M-9 PDF预览

HM365788M-9

更新时间: 2024-11-29 20:23:59
品牌 Logo 应用领域
TEMIC 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 106K
描述
Standard SRAM, 16KX4, 45ns, CMOS, PDIP22,

HM365788M-9 技术参数

是否Rohs认证:不符合生命周期:Transferred
Reach Compliance Code:unknown风险等级:5.83
Is Samacsys:N最长访问时间:45 ns
I/O 类型:COMMONJESD-30 代码:R-PDIP-T22
JESD-609代码:e0内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
功能数量:1端口数量:1
端子数量:22字数:16384 words
字数代码:16000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:16KX4输出特性:3-STATE
可输出:NO封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP22,.3
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified最大待机电流:0.02 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.1 mA标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUALBase Number Matches:1

HM365788M-9 数据手册

 浏览型号HM365788M-9的Datasheet PDF文件第2页浏览型号HM365788M-9的Datasheet PDF文件第3页浏览型号HM365788M-9的Datasheet PDF文件第4页浏览型号HM365788M-9的Datasheet PDF文件第5页浏览型号HM365788M-9的Datasheet PDF文件第6页浏览型号HM365788M-9的Datasheet PDF文件第7页 
MATRA MHS  
HM 65788  
16 K × 4 High Speed CMOS SRAM  
Introduction  
The HM 65788 is a high speed CMOS static RAM Easy memory expansion is provided by an active low chip  
organized as 16384 × 4 bits. It is manufactured using select (CS) and three state drivers.  
MHS’s high performance CMOS technology.  
All inputs and outputs of the HM 65788 are TTL  
Access times as fast as 15 ns are available with maximum compatible and operate from single 5 V supply thus  
power consumption of only 633 mW.  
simplifying system design.  
The HM 65788 features fully static operation requiring no The HM 65788 is 100 % processed following the test  
external clocks or timing strobes. The automatic methods of MIL STD 883 and/or ESA/SCC 9000 making  
power-down feature reduces the power consumption by it ideally suitable for military/space applications that  
60 % when the circuit is deselected.  
demand superior levels of performance and reliability.  
Features  
D Fast access time  
D 300 mils width package  
D TTL compatible inputs and outputs  
D Asynchronous  
Commercial : 15/20/25/35/45 ns  
Industrial/military : 20/25/35/45/55 ns  
D Low power consumption  
Active : 267 mW (typ)  
D Capable of withstanding greater than 2000 V electrostatic  
discharge  
Standby : 75 mW (typ)  
D Single 5 volt supply  
D Wide temperature range :  
–55°C to + 125°C  
Interface  
Block Diagram  
Rev. C (16/12/94)  
1

与HM365788M-9相关器件

型号 品牌 获取价格 描述 数据表
HM3-65788M-9+ ETC

获取价格

x4 SRAM
HM3-65788N-2 ETC

获取价格

HIGH SPEED CMOS SRAM
HM3-65788N-5 ETC

获取价格

HIGH SPEED CMOS SRAM
HM365788N-5:D TEMIC

获取价格

Standard SRAM, 16KX4, 55ns, CMOS, PDIP22,
HM3-65788N-8 ETC

获取价格

HIGH SPEED CMOS SRAM
HM365788N-9 TEMIC

获取价格

Standard SRAM, 16KX4, 55ns, CMOS, PDIP22,
HM365788N-9:D TEMIC

获取价格

Standard SRAM, 16KX4, 55ns, CMOS, PDIP22,
HM3-65788N-9+ TEMIC

获取价格

Standard SRAM, 16KX4, 55ns, CMOS, PDIP22,
HM3-65789 ETC

获取价格

HIGH SPEED CMOS SRAM
HM365789E-5 ETC

获取价格

x4 SRAM