5秒后页面跳转
HM165768BN-2/883 PDF预览

HM165768BN-2/883

更新时间: 2024-11-16 15:34:07
品牌 Logo 应用领域
TEMIC 静态存储器内存集成电路
页数 文件大小 规格书
9页 100K
描述
Standard SRAM, 4KX4, 55ns, CMOS, CDIP20,

HM165768BN-2/883 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.71最长访问时间:55 ns
JESD-30 代码:R-CDIP-T20内存密度:16384 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
功能数量:1端口数量:1
端子数量:20字数:4096 words
字数代码:4000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:4KX4输出特性:3-STATE
可输出:NO封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL认证状态:Not Qualified
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子形式:THROUGH-HOLE端子位置:DUAL
Base Number Matches:1

HM165768BN-2/883 数据手册

 浏览型号HM165768BN-2/883的Datasheet PDF文件第2页浏览型号HM165768BN-2/883的Datasheet PDF文件第3页浏览型号HM165768BN-2/883的Datasheet PDF文件第4页浏览型号HM165768BN-2/883的Datasheet PDF文件第5页浏览型号HM165768BN-2/883的Datasheet PDF文件第6页浏览型号HM165768BN-2/883的Datasheet PDF文件第7页 
MATRA MHS  
HM 65768B  
4 K × 4 High Speed CMOS SRAM  
Introduction  
The HM 65768B is a high speed CMOS static RAM Each memory expansion is provided by an active low chip  
organized as 4096 × 4 bits. It is manufactured using select (CS) and three state drivers.  
MHS’s high performance CMOS technology.  
All inputs and outputs of the HM 65768 are TTL  
Access times as fast as 25 ns are available with maximum compatible and operate from single 5 V supply thus  
power consumption of only 385 mW.  
simplifying system design.  
The HM 65768B features fully static operation requiring The HM 65768B is 100 % processed following the test  
no external clocks or timing strobes. The automatic methods of MIL STD 883 and/or ESA/SCC 9000, making  
power-down feature reduces the power consumption by it ideally suitable for military/space applications that  
77 % when the circuit is deselected.  
demand superior levels of performance and reliability.  
Features  
D Fast access time  
D 300 mils width package  
D TTL compatible inputs and outputs  
D Asynchronous  
Commercial : 25/35/45/55 ns (max)  
Military : 25/35/45/55 ns (max)  
D Low power consumption  
Active : 200 mW (typ)  
D Capable of withstanding greater than 2000 V electrostatic  
discharge  
Standby : 35 mW (typ)  
D Single 5 volt supply  
D Wide temperature range :  
–55°C to + 125°C  
Interface  
Block Diagram  
Rev. C (16/12/94)  
1

与HM165768BN-2/883相关器件

型号 品牌 获取价格 描述 数据表
HM165768BN-2/883:D TEMIC

获取价格

Standard SRAM, 4KX4, 55ns, CMOS, CDIP20,
HM165768BN-5 TEMIC

获取价格

Standard SRAM, 4KX4, 55ns, CMOS, CDIP20,
HM165768BN-6:D TEMIC

获取价格

Standard SRAM, 4KX4, 55ns, CMOS, CDIP20,
HM1-65768H-2 ETC

获取价格

x4 SRAM
HM1-65768H-8 ETC

获取价格

x4 SRAM
HM1-65768K-2 ETC

获取价格

x4 SRAM
HM1-65768K-8 ETC

获取价格

x4 SRAM
HM1-65768M-2 ETC

获取价格

x4 SRAM
HM1-65768M-8 ETC

获取价格

x4 SRAM
HM1-65768N-2 ETC

获取价格

x4 SRAM