HMC349LP4C / 349LP4CE
v02.1205
HIGH ISOLATION SPDT
NON-REFLECTIVE SWITCH, DC - 4.0 GHz
Typical Applications
Features
High Isolation: 67 dB @ 1 GHz
62 dB @ 2 GHz
The HMC349LP4C / HMC349LP4CE is ideal for:
• Basestation Infrastructure
• MMDS & 3.5 GHz WLL
Single Positive Control: 0/+5V
+52 dBm Input IP3
• CATV/CMTS
Non-Reflective Design
All Off State
• Test Instrumentation
8
16 mm2 Leadless QFN SMT Package
Functional Diagram
General Description
The HMC349LP4C
& HMC349LP4CE are high
isolation non-reflective DC to 4 GHz GaAs MESFET
SPDT switches in low cost leadless surface mount
packages. The switch is ideal for cellular/PCS/
3G basestation applications yielding 60 to 65 dB
isolation, low 0.9 dB insertion loss and +52 dBm
input IP3. Power handling is excellent up through the
3.5 GHz WLL band with the switch offering a P1dB
compression point of +31 dBm. On-chip circuitry
allows a single positive voltage control of 0/+5 Volts
at very low DC currents. An enable input (EN) set to
logic high will put the switch in an “all off” state.
Electrical Specifications, TA = +25° C, Vctl = 0/+5 Vdc, Vdd = +5 Vdc, 50 Ohm System
Parameter
Frequency
Min.
Typ.
Max.
Units
DC - 1.0 GHz
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
0.9
1.0
1.2
1.4
1.2
1.3
1.5
1.7
dB
dB
dB
dB
Insertion Loss
DC - 1.0 GHz
DC - 4.0 GHz
60
55
67
62
dB
dB
Isolation (RFC to RF1/RF2)
DC - 2.0 GHz
DC - 3.0 GHz
DC - 4.0 GHz
20
15
13
dB
dB
dB
Return Loss (On State)
Return Loss (Off State)
0.5 - 4.0 GHz
0.25 - 4.0 GHz
15
31
dB
Input Power for 1 dB Compression
27
dBm
0.25 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
52
50
49
46
dBm
dBm
dBm
dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone)
Switching Speed
DC - 4.0 GHz
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
50
120
ns
ns
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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