Datasheet > HITJ0202MP_13

HITJ0202MP_13

更新时间： 2024-02-04 20:17:46

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	106K
描述
Silicon P Channel MOS FET Power Switching

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数据手册

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HITJ0202MP_13 数据手册

Preliminary Datasheet

HITJ0202MP

–20V, –2.7A, 105mmax.

Silicon P Channel MOS FET

Power Switching

R07DS0474EJ0200

Rev.2.00

May 09, 2013

Features



Low on-resistance

_DS(on)= 83 m typ (V_GS= –4.5 V, I_D= –1.4 A)



Low drive current

High speed switching

2.5 V gate drive

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

Note: Marking is “VV”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

–20

Unit

+8 / –12

–2.7

Note1

Drain peak current

I_D(pulse)

–8.0

Body - drain diode reverse drain current

Channel dissipation

I_DR

–2.7

Pch ^Note2

Tch

0.8

C

Channel temperature

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)

R07DS0474EJ0200 Rev.2.00

May 09, 2013

Page 1 of 6

12 3 4 5 6 7

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