Datasheet > HITJ0302MPTL-HQ

HITJ0302MPTL-HQ

更新时间： 2024-02-10 02:30:02

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	83K
描述
Silicon P Channel MOS FET Power Switching

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HITJ0302MPTL-HQ 数据手册

Preliminary Datasheet

HITJ0302MP

Silicon P Channel MOS FET

Power Switching

R07DS0477EJ0100

Rev.1.00

Jun 22, 2011

Features



Low on-resistance

_DS(on)= 138 m typ (V_GS= –10 V, I_D= –1.1 A)



Low drive current

High speed switching

4.5 V gate drive

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

Note: Marking is “NG”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

–30

Unit

+10 / –20

–2.2

Note1

Drain peak current

I_D(Pulse)

I_DR

Pch ^Note2

–5

Body - drain diode reverse drain current

Channel dissipation

–2.2

0.8

C

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. When using the glass epoxy board (FR-4: 40  40  1 mm)

R07DS0477EJ0100 Rev.1.00

Jun 22, 2011

Page 1 of 6

12 3 4 5 6 7

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