Datasheet > HITK0203MP

HITK0203MP

更新时间： 2024-02-22 11:22:58

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	85K
描述
Silicon N Channel MOS FET Power Switching

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中文翻译

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HITK0203MP 数据手册

Preliminary Datasheet

HITK0203MP

Silicon N Channel MOS FET

Power Switching

R07DS0481EJ0100

Rev.1.00

Jun 22, 2011

Features



Low on-resistance

_DS(on)= 68 m typ (V_GS= 4.5 V, I_D= 1.5 A)



Low drive current

High speed switching

2.5 V gate drive

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

Note: Marking is “SG”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

12

2.9

Note1

Drain peak current

I_D(pulse)

Body - drain diode reverse drain current

Channel dissipation

I_DR

2.9

Note2

Pch

Tch

Tstg

0.8

C

Channel temperature

150

Storage temperature

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)

R07DS0481EJ0100 Rev.1.00

Jun 22, 2011

Page 1 of 6

12 3 4 5 6 7

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