Datasheet > HITK0302MP_13

HITK0302MP_13

更新时间： 2024-02-26 07:03:19

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	102K
描述
Silicon N Channel MOS FET Power Switching

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数据手册

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HITK0302MP_13 数据手册

Preliminary Datasheet

HITK0302MP

30V, 2.7A, 115mmax.

Silicon N Channel MOS FET

Power Switching

R07DS0483EJ0200

Rev.2.00

May 09, 2013

Features



Low on-resistance

_DS(on)= 92 m typ (V_GS= 10 V, I_D= 1.3 A)



Low drive current

High speed switching

4.5 V gate drive

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

Note: Marking is “GV”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

20

2.7

Note1

Drain peak current

I_D(Pulse)

I_DR

Pch ^Note2

2.7

Body - drain diode reverse drain current

Channel dissipation

0.8

C

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW  10 s, duty cycle  1%

2. When using the glass epoxy board (FR-4: 40  40  1 mm)

R07DS0483EJ0200 Rev.2.00

May 09, 2013

Page 1 of 6

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