Datasheet > HF100-28

HF100-28

更新时间： 2024-11-24 22:33:23

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
2页	77K
描述
NPN SILICON RF POWER TRANSISTOR

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HF100-28 数据手册

HF100-28

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI HF100-28 is a class A silicon NPN

planar transistor, designed for SSB

communications. Diffused ballasting provide

High VSRW Capability under rated operating

conditions.

PACKAGE STYLE .500 4L FLG

FEATURES:

.112x45°

Ø.125 NOM.

• P_G= 15 dB min. at 100 W/30 MHz

• High linear power output

• IMD₃= -30 dBc max. at 100 W^(PEP)

• Omnigold™ Metalization System

• 28 V CE operation

FULL R

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.220 / 5.59

.230 / 5.84

I_C

20 A

65 V

.125 / 3.18

.245 / 6.22

.255 / 6.48

V_CBO

V_CEO

V_EBO

P_DISS

T_J

.720 / 18.28

.7.30 / 18.54

36 V

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

1.050 / 26.67

4.0 V

270 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

0.65 °C/W

.980 / 24.89

T_STG

θ_JC

ORDER CODE: ASI10608

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 100 mA

I_E= 10 mA

4.0

BV_CES

BV_CBO

BV_EBO

I_CES

_CE= 30 V

_CE= 5.0 V

---

h_FE

I_C= 5.0 A

---

200

C_ob

V_CB= 30 V

f = 1.0 MHz

285

G_P

V_CE= 28 V

P_IN= 3.16 W

P_PUT= 100 W

IMD₃

f₁= 30.000 MHz I_CQ= 100 mA

f₂= 30.001 MHz

-34

-30

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. D

1/2

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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