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HERF1607G PDF预览

HERF1607G

更新时间: 2024-11-17 22:51:15
品牌 Logo 应用领域
TSC 整流二极管高效整流二极管功效局域网
页数 文件大小 规格书
2页 64K
描述
Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers

HERF1607G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.1Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.7 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3湿度敏感等级:1
最大非重复峰值正向电流:125 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:16 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:800 V
最大反向恢复时间:0.08 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Pure Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

HERF1607G 数据手册

 浏览型号HERF1607G的Datasheet PDF文件第2页 
HERF1601G THRU HERF1608G  
Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers  
Voltage Range  
50 to 1000 Volts  
Current  
16.0 Amperes  
ITO-220AB  
Features  
Low forward voltage drop  
High current capability  
High reliability  
.134(3.4)DIA  
.113(3.0)DIA  
.112(2.85)  
.100(2.55)  
.272(6.9)  
.248(6.3)  
High surge current capability  
.606(15.5)  
.583(14.8)  
Mechanical Data  
Cases: ITO-220AB molded plastic  
Epoxy: UL 94V-O rate flame retardant  
Terminals: Leads solderable per MIL-  
STD-202, Method 208 guaranteed  
Polarity: As marked  
High temperature soldering guaranteed:  
260oC/ 0.25” (6.35mm) from case for 10  
seconds  
.110(2.8)  
.098(2.5)  
.543(13.8)  
.512(13.2)  
PIN 1  
PIN 3  
Positive CT  
PIN 2  
Mounting torque: 5 in – 1bs. max.  
Weight: 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HERF HERF HERF HERF HERF HERF HERF HERF  
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G  
Symbol  
Type Number  
Units  
V
Maximum Recurrent Peak Reverse  
Voltage  
50 100 200 300 400 600 800 1000  
VRRM  
Maximum RMS Voltage  
35  
70 140 210 280 420 560 700  
V
V
VRMS  
VDC  
Maximum DC Blocking Voltage  
50 100 200 300 400 600 800 1000  
Maximum Average Forward Rectified  
Current @TC =100  
16.0  
125  
A
A
I(AV)  
IFSM  
Peak Forward Surge Current, 8.3 ms  
Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method )  
Maximum Instantaneous Forward Voltage  
@8.0A  
Maximum DC Reverse Current  
@ TA=25at Rated DC Blocking Voltage  
@ TA=125℃  
1.0  
1.3  
10.0  
1.7  
V
VF  
IR  
uA  
uA  
400  
Typical Reverse Recovery Time ( Note 1 )  
Trr  
50  
80  
80  
50  
nS  
pF  
/W  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance (Note 3)  
Cj  
RθJC  
1.5  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-65 to +150  
TSTG  
-65 to +150  
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
3. Mounted on Heatsink Size of 4 in x 6 in x 0.25 in Al-Plate..  
- 304 -  

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