Datasheet > HER506G

HER506G

更新时间： 2024-02-11 00:06:35

品牌	Logo	应用领域
扬杰 - YANGJIE		功效二极管
页数	文件大小	规格书
4页	492K
描述
Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

HER506G 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.83

HER506G 数据手册

RoHS

HER501G THRU HER508G

COMPLIANT

High Efficient Rectifier

Features

● High efficiency

● High current capability

● High Reliability

● High surge current capability

● Glass passivated chip junction

● Solder dip 275 °C max. 7 s, per JESD 22-B106

Mechanical Data

● Package: DO-201AD(DO-27)

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant

● Terminals: Tin plated leads, solderable per J-STD-

002 and JESD22-B102

●

Color band denotes cathode end

Polarity:

(Ta=25℃ Unless otherwise specified）

■Maximum Ratings

HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508

PARAMETER

SYMBOL UNIT

HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508

Device marking code

V_RRM

100

200

300

400

600

800

1000

Repetitive Peak Reverse Voltage

Average Forward Current

@60Hz sine wave, Resistance load, Ta=50℃

I_F(AV)

5.0

Forward Surge Current(Non-repetitive)

@60Hz Half-sine wave, 1 cycle, Ta=25℃

I_FSM

150

℃

-55 ~+150

-55~+150

Storage Temperature

Junction Temperature

stg

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508

PARAMETER

SYMBOL

UNIT TEST CONDITIONS

Maximum instantaneous

forward voltage drop per diode

V_FM

I_FM=5.0A

1.0

1.3

1.7

I_RRM1

I_RRM2

T =25℃

2.5

Maximum DC reverse current

at rated DC blocking voltage

per diode

μA

T =100℃

150

I_F=0.5A I_R=1A

I_RR=0.25A

Reverse Recovery time

Typicaljunctioncapacitance

Measured at 1MHZ

and Applied Reverse

Voltage of 4.0 V.D.C.

Thermal Characteristics （T =25℃ Unless otherwise specified）

■

HER501G HER502G HER503G HER504G HER505G HER506G HER507G HER508G

PARAMETER

SYMBOL

UNIT

R_θ

Thermal Resistance(Typical)

J-A

℃/W

1 / 4

S-A288

Rev. 2.1, 21-Jan-15

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4

下载PDF

与HER506G相关器件

型号	品牌	描述	获取价格	数据表
HER506GC1	YANGJIE	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN	获取价格
HER506GD1	YANGJIE	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN	获取价格
HER506GP-AP	MCC	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD,	获取价格
HER506GP-AP-HF	MCC	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD,	获取价格
HER506GP-BP	MCC	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD,	获取价格
HER506GP-BP-HF	MCC	Rectifier Diode, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD,	获取价格