Datasheet > HER302G

HER302G

更新时间： 2024-12-01 04:57:27

品牌	Logo	应用领域
DAESAN		二极管功效
页数	文件大小	规格书
2页	306K
描述
CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

HER302G 数据手册

CURRENT 3.0 Amperes

VOLTAGE 50 to 1000 Volts

HER301G THRU HER308G

Features

· Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

· Low forward voltage drop

· High current capability

DO-201AD

0.210(5.3)

0.188(4.8)

DIA.

· High reliability

· Low power loss, high effciency

· Glass passivated junction

· High speed switching

1.0(25.4)

MIN.

· Low leakage

0.375(9.5)

0.285(7.2)

Mechanical Data

· Case : JEDEC DO-201AD molded plastic body

· Epoxy : UL94V-0 rate flame retardant

· Lead : Plated axial lead solderable per MIL-STD-750,

method 2026

· Polarity : Color band denotes cathode end

· Mounting Position : Any

1.0(25.4)

MIN.

0.042(1.1)

0.037(0.9)

DIA.

· Weight : 0.042 ounce, 1.19 gram

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

HER HER HER HER HER HER

Symbols

HER HER

Units

301G 302G 303G 304G 305G 306G 307G 308G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

RRM

RMS

100

200

140

200

300

210

300

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC blocking voltage

100

1000

Maximum average forward rectified current

0.375"(9.5mm) lead length @ at TA=55℃

Amps

Volts

(AV)

3.0

100

1.3

Peak forward surge current 8.3ms single

half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum instantaneous forward voltage

at 2.0A

1.0

1.7

Maximum DC reverse current at rated DC

10.0

200

blocking voltage TA=25℃

μA

Maximum DC reverse current at rated DC

blocking voltage T =125℃

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Trr

Operating junction and storage

temperature range

℃

-65 to +150

TSTG

Notes:

(1) Test conditions: I

F=0.5A, IR=1.0A, Irr=0.25A.

(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

中文翻译

下载PDF

与HER302G相关器件

型号	品牌	获取价格	描述	数据表
HER302G_15	LRC	获取价格	Glass Passivated Junction
HER302G-2C3A-2CDO-27	DGNJDZ	获取价格	3.0 AMP HIGH EFFICIENCY RECTIFIERS
HER302GA-G	COMCHIP	获取价格	High Efficiency Rectifiers
HER302G-AP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
HER302GB-G	COMCHIP	获取价格	High Efficiency Rectifiers
HER302G-BP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,
HER302G-K	TSC	获取价格	3A, 50V - 1000V Glass Passivated High Efficient Rectifier
HER302GPT	CHENMKO	获取价格	HIGH EFFICIENCY RECTIFIER
HER302GR	SECOS	获取价格	Voltage 50 ~ 1000 V 3Amp Glass Passivated High Efficiency Rectifiers
HER302GT-G	COMCHIP	获取价格	High Efficiency Rectifiers