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HEF4011BT-Q100 PDF预览

HEF4011BT-Q100

更新时间: 2024-11-19 01:22:43
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
11页 789K
描述
Quad 2-input NAND gate

HEF4011BT-Q100 数据手册

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HEF4011B-Q100  
Quad 2-input NAND gate  
Rev. 1 — 26 June 2013  
Product data sheet  
1. General description  
The HEF4011B-Q100 is a quad 2-input NAND gate. The outputs are fully buffered for the  
highest noise immunity and pattern insensitivity to output impedance.  
It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS  
(usually ground). Unused inputs must be connected to VDD, VSS, or another input.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Fully static operation  
5 V, 10 V, and 15 V parametric ratings  
Standardized symmetrical output characteristics  
ESD protection:  
MIL-STD-833, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
Complies with JEDEC standard JESD 13-B  
3. Ordering information  
Table 1.  
Ordering information  
All types operate from 40 C to +125 C  
Type number  
Package  
Name  
Description  
Version  
HEF4011BT-Q100 SO14  
plastic small outline package; 14 leads; body width 3.9 mm  
SOT108-1  

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