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HD6433885W PDF预览

HD6433885W

更新时间: 2024-11-26 05:35:07
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
523页 2012K
描述
Single-Chip Microcomputer

HD6433885W 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Contact Manufacturer零件包装代码:QFP
包装说明:TQFP-100针数:100
Reach Compliance Code:unknownHTS代码:8542.31.00.01
风险等级:5.47具有ADC:YES
地址总线宽度:位大小:8
最大时钟频率:3 MHzDAC 通道:NO
DMA 通道:NO外部数据总线宽度:
JESD-30 代码:S-PQFP-G100JESD-609代码:e0
长度:12 mmI/O 线路数量:84
端子数量:100最高工作温度:75 °C
最低工作温度:-20 °CPWM 通道:YES
封装主体材料:PLASTIC/EPOXY封装代码:TFQFP
封装形状:SQUARE封装形式:FLATPACK, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
ROM可编程性:MROM座面最大高度:1.2 mm
速度:3 MHz最大供电电压:5.5 V
最小供电电压:1.8 V标称供电电压:5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL EXTENDED端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.4 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:12 mmuPs/uCs/外围集成电路类型:MICROCONTROLLER
Base Number Matches:1

HD6433885W 数据手册

 浏览型号HD6433885W的Datasheet PDF文件第2页浏览型号HD6433885W的Datasheet PDF文件第3页浏览型号HD6433885W的Datasheet PDF文件第4页浏览型号HD6433885W的Datasheet PDF文件第5页浏览型号HD6433885W的Datasheet PDF文件第6页浏览型号HD6433885W的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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