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HD06 PDF预览

HD06

更新时间: 2024-11-28 22:33:19
品牌 Logo 应用领域
美台 - DIODES 整流二极管桥式整流二极管光电二极管
页数 文件大小 规格书
2页 57K
描述
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

HD06 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-G4Reach Compliance Code:unknown
风险等级:5.16Is Samacsys:N
最小击穿电压:600 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1 VJESD-30 代码:R-PDSO-G4
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大重复峰值反向电压:600 V
子类别:Bridge Rectifier Diodes表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

HD06 数据手册

 浏览型号HD06的Datasheet PDF文件第2页 
HD01 - HD06  
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE  
RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
Low Forward Voltage Drop  
MiniDIP  
Surge Overload Rating to 30A Peak  
Ideally Suited for Automatic Assembly  
Miniature Package Saves Space on PC Boards  
Dim  
A
Min  
5.43  
3.6  
Max  
5.75  
4.0  
L
G
B
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
0.15  
0.05  
¾
0.35  
0.20  
7.0  
A B  
D E  
·
UL Listed Under Recognized Component Index,  
File Number E94661  
D
E
G
H
0.70  
4.5  
1.10  
4.9  
Mechanical Data  
H
C
·
·
Case: MiniDIP, Molded Plastic  
J
J
2.3  
2.7  
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 2026  
K
2.5  
2.7  
K
L
0.50  
0.80  
·
·
·
Polarity: As Marked on Case  
Weight: 0.125 grams (approx.)  
Marking: Type Number  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
HD01  
100  
70  
HD02  
200  
HD04  
400  
HD06  
600  
Unit  
VRMM  
VRWM  
VDC  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
VRMS  
IO  
RMS Reverse Voltage  
140  
280  
420  
V
A
Average Forward Rectified Current (Note 1)  
0.8  
TA = @ 40°C  
Non-Repetitive Peak Forward Surge Current, 8.3 ms  
Single half-sine-wave Superimposed on Rated Load  
(JEDECmethod)  
IFSM  
30  
A
VF  
IR  
Instantaneous Voltage Drop @ 0.4A (per element)  
1.0  
V
Peak Reverse Current at Rated  
DC Blocking Voltage (per element)  
@ TA = 25°C  
@ TA = 125°C  
5.0  
500  
mA  
Cj  
Typical Junction Capacitance (per element)  
(Note 2)  
10  
75  
pF  
°C/W  
°C  
RqJA  
Typical Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
Notes:  
1. Mounted on Ceramic PC Board.  
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0 V.  
DS17003 Rev. F-2  
1 of 2  
HD01-HD06  

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