Datasheet > HB52D168DC-A6F

HB52D168DC-A6F

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
日立 - HITACHI		动态存储器
页数	文件大小	规格书
68页	302K
描述
Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144

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HB52D168DC-A6F 数据手册

HB52D168DC-F

Byte No. Function described

Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments

SDRAM device attributes:

W latency

SDRAM module attributes

Non buffer

V_CC± 10%

SDRAM device attributes:

General

SDRAM cycle time

(2nd highest CE latency)

(-A6F/A6FL) 10 ns

CL = 2

(-B6F/B6FL) 15 ns

SDRAM access from Clock

(2nd highest CE latency)

(-A6F/A6FL) 6 ns

CL = 2

(-B6F/B6FL) 9 ns

SDRAM cycle time

(3rd highest CE latency)

Undefined

SDRAM access from Clock

(3rd highest CE latency)

Undefined

Minimum row precharge time

Row active to row active min

RE to CE delay min

20 ns

50 ns

Minimum RE pulse width

Density of each bank on

module

2 bank

64M byte

Address and command signal 0

input setup time

2 ns

1 ns

Address and command signal 0

input hold time

Data signal input setup time

Data signal input hold time

2 ns

1 ns

36 to 61 Superset information

Future use

Rev. 1.2A

SPD data revision code

Checksum for bytes 0 to 62

(-A6F/A6FL)

(-B6F/B6FL)

´ ´

134

Manufacturer’s JEDEC ID code

HITACHI

65 to 71 Manufacturer’s JEDEC ID code

72 Manufacturing location

*³(ASCII-

8bit code)

1...4 5 678 9 10...68

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与HB52D168DC-A6F相关器件

型号	品牌	描述	获取价格	数据表
HB52D168DC-A6FL	HITACHI	Synchronous DRAM Module, 16MX64, 6ns, CMOS, DIMM-144	获取价格
HB52D168GB-A6B	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格
HB52D168GB-A6BL	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格
HB52D168GB-B	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格
HB52D168GB-B6B	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格
HB52D168GB-B6BL	ELPIDA	128 MB Unbuffered SDRAM Micro DIMM 16-Mword ×	获取价格