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HB52D168GB-B PDF预览

HB52D168GB-B

更新时间: 2022-12-20 09:11:46
品牌 Logo 应用领域
尔必达 - ELPIDA 动态存储器PC
页数 文件大小 规格书
19页 127K
描述
128 MB Unbuffered SDRAM Micro DIMM 16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module (4 pcs of 16 M × 16 components) PC133/100 SDRAM

HB52D168GB-B 数据手册

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HB52F168GB-B  
HB52D168GB-B  
128 MB Unbuffered SDRAM Micro DIMM  
16-Mword × 64-bit, 133/100 MHz Memory Bus, 1-Bank Module  
(4 pcs of 16 M × 16 components)  
PC133/100 SDRAM  
E0008H10 (1st edition)  
(Previous ADE-203-1219A (Z))  
Jan. 19, 2001  
Description  
The HB52F168GB and HB52D168GB are a 16M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual  
In-line Memory Module (Micro DIMM), mounted 4 pieces of 256-Mbit SDRAM (HM5225165BTT) sealed  
in TSOP package and 1 piece of serial EEPROM (2-kbit EEPROM) for Presence Detect (PD). An outline of  
the products is 144-pin Zig Zag Dual tabs socket type compact and thin package. Therefore, they make high  
density mounting possible without surface mount technology. They provide common data inputs and outputs.  
Decoupling capacitors are mounted beside TSOP on the module board.  
Features  
144-pin Zig Zag Dual tabs socket type (dual lead out)  
Outline: 38.00 mm (Length) × 30.00 mm (Height) × 3.80 mm (Thickness)  
Lead pitch: 0.50 mm  
3.3 V power supply  
Clock frequency: 133/100 MHz (max)  
LVTTL interface  
Data bus width: × 64 Non parity  
Single pulsed RAS  
4 Banks can operates simultaneously and independently  
Burst read/write operation and burst read/single write operation capability  
Programmable burst length: 1/2/4/8  
2 variations of burst sequence  
Sequential  
Interleave  
This product became EOL in September, 2002.  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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