Datasheet > HAL114SF-E

HAL114SF-E

更新时间： 2024-01-30 03:37:48

品牌	Logo	应用领域
MICRONAS		传感器
页数	文件大小	规格书
17页	147K
描述
Hall Effect Sensor Family

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技术参数
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HAL114SF-E 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.56	其他特性：	REVERSE VOLTAGE PROTECTION
主体宽度：	1.5 mm	主体高度：	3.05 mm
主体长度或直径：	4.06 mm	外壳：	PLASTIC
滞后：	28 mT	最大磁场范围：	11 mT
最小磁场范围：	-17 mT	安装特点：	THROUGH HOLE MOUNT
最大工作电流：	11 mA	最大输出电流：	20 mA
输出范围：	0.13-0.28V	输出类型：	ANALOG VOLTAGE
封装形状/形式：	RECTANGULAR	传感器/换能器类型：	MAGNETIC FIELD SENSOR,HALL EFFECT
表面贴装：	NO	端接类型：	SOLDER
Base Number Matches：	1

HAL114SF-E 数据手册

HAL11x

1.4. Operating Junction Temperature Range

2. Functional Description

The Hall sensors from Micronas are specified to the chip

The HAL11x sensors are monolithic integrated circuits

which switch in response to magnetic fields. If a

magnetic field with flux lines perpendicular to the

sensitive area is applied to the sensor, the biased Hall

plate forces a Hall voltage proportional to this field. The

Hall voltage is compared with the actual threshold level

in the comparator. The temperature-dependent bias

increases the supply voltage of the Hall plates and

adjusts the switching points to the decreasing induction

of magnets at higher temperatures. If the magnetic field

exceeds the threshold levels, the open drain output

switches to the appropriate state. The built-in hysteresis

eliminatesoscillationandprovidesswitchingbehaviorof

output without bouncing.

temperature (junction temperature T ).

K: T = –40 °C to +140 °C

E: T = –40 °C to +100 °C

C: T = 0 °C to +100 °C

The relationship between ambient temperature (T ) and

junction temperatureisexplainedinsection5.2. onpage

14.

1.5. Hall Sensor Package Codes

HALXXXPA-T

Shunt protection devices clamp voltage peaks at the

Temperature Range: K, E, or C

Output-pin and V -pin together with external series

Package: SF for SOT-89B

UA for TO-92UA

resistors. Reverse current is limited at the V -pin by an

internal series resistor up to –15 V. No external reverse

(SO for SOT-89A)

protection diode is needed at the V -pin for reverse

Type: 11x

voltages ranging from 0 V to –15 V.

Example: HAL114UA-E

HAL11x

Reverse

→ Type: 114

→ Package: TO-92UA

Temperature

Dependent

Bias

Short Circuit &

Overvoltage

Protection

Hysteresis

Control

Voltage &

Overvoltage

Protection

→ Temperature Range: T = –40 °C to +100 °C

Hall Plate

Comparator

OUT

Hall sensors are available in a wide variety of packaging

versions and quantities. For more detailed information,

please refer to the brochure: “Ordering Codes for Hall

Sensors”.

Output

GND

1.6. Solderability

Fig. 2–1: HAL11x block diagram

all packages: according to IEC68-2-58

During soldering reflow processing and manual

reworking, a component body temperature of 260 °C

should not be exceeded.

Components stored in the original packaging should

provideashelflifeofatleast12months, startingfromthe

date code printed on the labels, even in environments as

extreme as 40 °C and 90% relative humidity.

OUT

GND

Fig. 1–1: Pin configuration

Micronas

1 2 345 6 7...17

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与HAL114SF-E相关器件

型号	品牌	描述	获取价格	数据表
HAL114SF-K	MICRONAS	Hall Effect Sensor Family	获取价格
HAL114SO-A	MICRONAS	Unipolar Hall Switch IC	获取价格
HAL114SO-C	MICRONAS	Unipolar Hall Switch IC	获取价格
HAL114SO-C	TDK	Hall Effect Sensor, -17mT Min, 11mT Max, 0.13-0.28V, CMOS, Plastic/epoxy, Rectangular, 3 P	获取价格
HAL114SO-E	MICRONAS	Unipolar Hall Switch IC	获取价格
HAL114SO-E	TDK	Hall Effect Sensor, -17mT Min, 11mT Max, 0.13-0.28V, CMOS, Plastic/epoxy, Rectangular, 3 P	获取价格

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