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HA1926B PDF预览

HA1926B

更新时间: 2024-11-23 18:47:51
品牌 Logo 应用领域
APITECH 测试二极管变容二极管
页数 文件大小 规格书
1页 59K
描述
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 12pF C(T), 30V, Silicon, Hyperabrupt,

HA1926B 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.17
其他特性:HIGH Q最小击穿电压:30 V
外壳连接:ISOLATED配置:SINGLE
二极管电容容差:5%最小二极管电容比:3.9
标称二极管电容:12 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.4 W
认证状态:Not Qualified最小质量因数:700
最大重复峰值反向电压:30 V最大反向电流:2e-8 µA
反向测试电压:25 V子类别:Varactors
表面贴装:NO端子形式:WIRE
端子位置:AXIAL变容二极管分类:HYPERABRUPT
Base Number Matches:1

HA1926B 数据手册

  

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