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HA1706EE PDF预览

HA1706EE

更新时间: 2024-11-21 17:25:15
品牌 Logo 应用领域
APITECH 测试二极管变容二极管
页数 文件大小 规格书
1页 86K
描述
Variable Capacitance Diode, 2.7pF C(T), 30V, Silicon, Hyperabrupt,

HA1706EE 技术参数

生命周期:Active包装说明:X-CXMW-F3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.06
Is Samacsys:N最小击穿电压:30 V
配置:COMMON ANODE, 2 ELEMENTS二极管电容容差:10%
最小二极管电容比:5.9标称二极管电容:2.7 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
JESD-30 代码:X-CXMW-F3元件数量:2
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:UNSPECIFIED封装形式:MICROWAVE
认证状态:Not Qualified最小质量因数:1100
最大重复峰值反向电压:30 V最大反向电流:0.02 µA
反向测试电压:25 V子类别:Varactors
表面贴装:YES端子形式:FLAT
端子位置:UNSPECIFIED变容二极管分类:HYPERABRUPT
Base Number Matches:1

HA1706EE 数据手册

  

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