HA-2640/883
Die Characteristics
DIE DIMENSIONS:
93 x 68 x 19 mils ± 1 mils
2360 x 1720 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
5.0 x 104 A/cm2 at 12mA
SUBSTRATE POTENTIAL (Powered Up):
Unbiased
TRANSISTOR COUNT: 76
PROCESS: HV200 Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2640/883
BAL
-IN
COMP
V+
OUT
+IN
V-
BAL
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Spec Number 511029-883
3-201