是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Not Recommended | 包装说明: | LDPAK-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.28 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 60 A | 最大漏极电流 (ID): | 60 A |
最大漏源导通电阻: | 0.0115 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 90 W |
最大脉冲漏极电流 (IDM): | 240 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H7N0307LS | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0307LS-E | RENESAS |
获取价格 |
60A, 30V, 0.0115ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | |
H7N0307LSTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0307LSTR-E | RENESAS |
获取价格 |
暂无描述 | |
H7N0308AB | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0308AB_05 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0308AB-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0308CF | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0308CF | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0308CF-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |