生命周期: | Not Recommended | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.27 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 70 A |
最大漏源导通电阻: | 0.0085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 280 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
H7N0308LMTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0308LS | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0308LS-E | RENESAS |
获取价格 |
70A, 30V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | |
H7N0308LSTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0310LD | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0310LD_06 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0310LD|H7N0310LS|H7N0310LM | ETC |
获取价格 |
||
H7N0310LD-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0310LM | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
H7N0310LMTL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |